Bi-doped ZnO layer prepared by electrochemical deposition

Journal of the Electrochemical Society

Volumn 154, Issue 3, 2007, Pages

  Lan, C J ^a,b   Cheng, H Y ^a   Chung, R J ^a   Li, J H ^a   Kao, K F ^a   Chin, T S ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b ELECTROCHEMICAL SOCIETY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC EMISSION SPECTROSCOPY; BATH COMPOSITION; LATTICE STRUCTURE; SHEET RESISTANCE;

BISMUTH; CARRIER CONCENTRATION; DOPING (ADDITIVES); ELECTRODEPOSITION; INDUCTIVELY COUPLED PLASMA; X RAY DIFFRACTION;

ZINC OXIDE;

EID: 33846943380     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2422887     Document Type: Article

References (31)

1. A. Mondal, N. Mukherjee, and S. K. Bhar, Mater. Lett., 60, 1748 (2006).
2. M. Izaki and T. Omi, Appl. Phys. Lett., 68, 2439 (1996).
3. S. Peulon and D. Lincot, Adv. Mater. (Weinheim, Ger.), 8, 166 (1996).
4. Q. P. Chen, M. Z. Xue, Q. R. Sheng, Y. G. Liu, and Z. F. Ma, Electrochem. Solid-State Lett., 9, C58 (2006).
5. S. Otani, J. Katayama, H. Umemoto, and M. Matsuoka, J. Electrochem. Soc., 153, C551 (2006).
6. M. Abid, J. P. Abid, and J. Ph. Ansermet, J. Electrochem. Soc., 153, D138 (2006).
7. J. B. Cui, Q. Zeng, and U. J. Gibson, J. Appl. Phys., 99, 08M113 (2006).
8. B. B. Lipinski, D. H. Mosca, N. Mattoso, W. H. Schreiner, and A. J. A. de Oliveira, Electrochem. Solid-State Lett., 7, C115 (2004).
9. J. B. Cui and U. J. Gibson, Appl. Phys. Lett., 87, 133108 (2005).
10. J. B. Cui and U. J. Gibson, J. Phys. Chem. B, 109, 22074 (2005).
11. M. Kemell, F. Dartigues, M. Ritala, and M. Leskela, Thin Solid Films, 434, 20 (2003).
12. G. Machado, D. N. Guerra, D. Leinen, J. R. Ramos-Barrado, R. E. Marotti, and E. A. Dalchiele, Thin Solid Films, 490, 124 (2005).
13. H. Ishizaki, M. Izaki, and T. Ito, J. Electrochem. Soc., 148, C540 (2001).
14. H. Ishizaki, M. Imaizumi, S. Matsuda, M. Izaki, and T. Ito, Thin Solid Films, 411, 65 (2002).
15. T. Yoshida, D. Komatsu, N. Shimokawa, and H. Minoura, Thin Solid Films, 451-452, 166 (2004).
16. T. Yoshino, S. Takanezawa, T. Ohmori, and H. Masuda, Jpn. J. Appl. Phys., Part 2, 35, L1512 (1996).
17. E. Michaelis, D. Wohrle, J. Rathousky, and M. Wark, Thin Solid Films, 497, 163 (2006).
18. A. Goux, T. Pauporte, J. Chivot, and D. Lincot, Electrochim. Acta, 50, 2239 (2005).
19. B. Illy, B. A. Shollock, J. L. Macmanus-Driscoll, and M. P. Ryan, Nanotechnology, 16, 320 (2005).
20. F. Gao, S. P. Naik, Y. Sasaki, and T. Okubo, Thin Solid Films, 495, 68 (2006).
21. M. Fahoume, O. Maghfoul, M. Aggour, B. Hartiti, F. Chraibi, and A. Ennaoui, Sol. Energy Mater. Sol. Cells, 90, 1437 (2006).
22. Y. Leprince-Wang, G. Y. Wang, X. Z. Zhang, and D. P. Yu, J. Cryst. Growth, 287, 89 (2006).
23. M. Izaki and T. Omi, J. Electrochem. Soc., 144, 1949 (1997).
24. M. Takeuchi, T. Takeyama, N. Takahashi, and T. Nakamura, Electrochemistry (Tokyo, Jpn.), 73, 1030 (2005).
25. T. P. Gujar, V. R. Shinde, S. S. Kulkarni, H. M. Pathan, and C. D. Lokhande, Appl. Surf. Sci., 252, 3585 (2006).
26. M. S. Antelman, Encyclopedia of Chemical Electrode Potentials, Plenum Press, New York (1982).
27. Joint Committee on Powder Diffraction Standards, set 36, no. 1451, International Center for Diffraction Data, Swarthmore, PA (1990).
28. H. T. Lin, T. S. Chin, J. C. Shih, S. H. Lin, T. M. Hong, R. T. Huang, F. R. Chen, and J. J. Kai, Appl. Phys. Lett., 85, 621 (2004).
29. J. F. Moulder, W. F. Strikle, P. E. Sobol, and K. D. Bomben, Handbook of X-Ray photoelectron Spectroscopy, Physical Electronics Division, Perkin-Elmer Corp., Eden Prairie, MN (1992).
30. J. R. Duclere, R. Ohaire, A. Meaney, K. Johnston, I. Reid, G. Tobin, J. P. Mosnier, M. Guilloux-Viry, E. Mcglynn, and M. O. Henry, J. Mater. Sci., 16, 421 (2005).
31. F. X. Xiu, L. J. Mandalapu, Z. Yang, J. L. Liu, G. F. Liu, and J. A. Yarmoff, Appl. Phys. Lett., 89, 052103 (2006).