Silicon-Germanium multi-quantum well photodetectors in the near infrared

Optics Express

Volumn 20, Issue 7, 2012, Pages 7608-7615

  Onaran, Efe ^a   Onbasli, M Cengiz ^b   Yesilyurt, Alper ^a   Yu, Hyun Yong ^c   Nayfeh, Ammar M ^d   Okyay, Ali K ^a  

^a BILKENT UNIVERSITY   (Turkey)

^b USA   (United States)

^c Korea University   (South Korea)

^d KHALIFA UNIVERSITY   (United Arab Emirates)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL FILMS; EPITAXIAL GROWTH; LEAKAGE CURRENTS; MONOLITHIC INTEGRATED CIRCUITS; SINGLE CRYSTALS;

APPLIED VOLTAGES; EPITAXIAL TECHNIQUES; EPITAXIALLY GROWN; GROWTH TECHNIQUES; HIGH-QUALITY FILMS; MONOLITHIC INTEGRATION; MULTIQUANTUM WELLS; NEAR INFRARED; P-I-N PHOTODETECTORS; RESPONSIVITY; REVERSE LEAKAGE CURRENT; SILICON GERMANIUM; SILICON SUBSTRATES; SPECTRAL RESPONSIVITY; VLSI TECHNOLOGY;

PHOTODETECTORS;

GERMANIUM; SILICON;

ARTICLE; CHEMISTRY; EQUIPMENT; EQUIPMENT DESIGN; INFRARED RADIATION; INSTRUMENTATION; NEAR INFRARED SPECTROSCOPY; PHOTOMETRY; RADIATION EXPOSURE;

EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; GERMANIUM; INFRARED RAYS; PHOTOMETRY; SILICON; SPECTROSCOPY, NEAR-INFRARED;

EID: 84859416922     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.20.007608     Document Type: Article

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