-
1
-
-
84975575716
-
Optics for low-energy communication inside digital processors: Quantum detectors, sources, and modulators as efficient impedance converters
-
D. A. B. Miller, “Optics for low-energy communication inside digital processors: quantum detectors, sources, and modulators as efficient impedance converters,” Opt. Lett. 14(2), 146-148 (1989).
-
(1989)
Opt. Lett.
, vol.14
, Issue.2
, pp. 146-148
-
-
Miller, D.A.B.1
-
2
-
-
0031130291
-
Physical reasons for optical interconnection
-
D. A. B. Miller, “Physical reasons for optical interconnection,” Int. J. Optoelectron. 11, 155-168 (1997).
-
(1997)
Int. J. Optoelectron.
, vol.11
, pp. 155-168
-
-
Miller, D.A.B.1
-
3
-
-
67449128189
-
Device requirements for optical interconnects to silicon chips
-
D. A. B. Miller, “Device requirements for optical interconnects to silicon chips,” Proc. IEEE 97(7), 1166-1185 (2009).
-
(2009)
Proc. IEEE
, vol.97
, Issue.7
, pp. 1166-1185
-
-
Miller, D.A.B.1
-
4
-
-
0030114091
-
Scaling optoelectronic-VLSI circuits into the 21st century: A Technology Roadmap
-
A. V. Krishnamoorthy and D. A. B. Miller, “Scaling optoelectronic-VLSI circuits into the 21st century: A Technology Roadmap,” IEEE J. Sel. Top. Quantum Electron. 2(1), 55-76 (1996).
-
(1996)
IEEE J. Sel. Top. Quantum Electron.
, vol.2
, Issue.1
, pp. 55-76
-
-
Krishnamoorthy, A.V.1
Miller, D.A.B.2
-
5
-
-
69549084447
-
Compact performance models and comparisons for gigascale on-chip global interconnect technologies
-
K.-H. Koo, P. Kapur, and K. C. Saraswat, “Compact performance models and comparisons for gigascale on-chip global interconnect technologies,” IEEE Trans. Electron. Dev. 56(9), 1787-1798 (2009).
-
(2009)
IEEE Trans. Electron. Dev.
, vol.56
, Issue.9
, pp. 1787-1798
-
-
Koo, K.-H.1
Kapur, P.2
Saraswat, K.C.3
-
6
-
-
77955214401
-
Silicon optical modulators
-
G. T. Reed, G. Mashonovich, F. Y. Gardes, and D. J. Thomson, “Silicon optical modulators,” Nat. Photonics 4(8), 518-526 (2010).
-
(2010)
Nat. Photonics
, vol.4
, Issue.8
, pp. 518-526
-
-
Reed, G.T.1
Mashonovich, G.2
Gardes, F.Y.3
Thomson, D.J.4
-
7
-
-
41149143820
-
Silicon microring resonators with 1.5-microm radius
-
Q. Xu, D. Fattal, and R. G. Beausoleil, “Silicon microring resonators with 1.5-microm radius,” Opt. Express 16(6), 4309-4315 (2008).
-
(2008)
Opt. Express
, vol.16
, Issue.6
, pp. 4309-4315
-
-
Xu, Q.1
Fattal, D.2
Beausoleil, R.G.3
-
8
-
-
72449208486
-
High-speed modulation of a compact silicon ring resonator based on a reverse-biased pn diode
-
F. Y. Gardes, A. Brimont, P. Sanchis, G. Rasigade, D. Marris-Morini, L. O’Faolain, F. Dong, J. M. Fedeli, P. Dumon, L. Vivien, T. F. Krauss, G. T. Reed, and J. Marti, “High-speed modulation of a compact silicon ring resonator based on a reverse-biased pn diode,” Opt. Express 17(24), 21986-21991 (2009).
-
(2009)
Opt. Express
, vol.17
, Issue.24
, pp. 21986-21991
-
-
Gardes, F.Y.1
Brimont, A.2
Sanchis, P.3
Rasigade, G.4
Marris-Morini, D.5
O’Faolain, L.6
Dong, F.7
Fedeli, J.M.8
Dumon, P.9
Vivien, L.10
Krauss, T.F.11
Reed, G.T.12
Marti, J.13
-
9
-
-
72049111797
-
Low Vpp, ultralow-energy, compact, high-speed silicon electro-optic modulator
-
P. Dong, S. Liao, D. Feng, H. Liang, D. Zheng, R. Shafiiha, C.-C. Kung, W. Qian, G. Li, X. Zheng, A. V. Krishnamoorthy, and M. Asghari, “Low Vpp, ultralow-energy, compact, high-speed silicon electro-optic modulator,” Opt. Express 17(25), 22484-22490 (2009).
-
(2009)
Opt. Express
, vol.17
, Issue.25
, pp. 22484-22490
-
-
Dong, P.1
Liao, S.2
Feng, D.3
Liang, H.4
Zheng, D.5
Shafiiha, R.6
Kung, C.-C.7
Qian, W.8
Li, G.9
Zheng, X.10
Krishnamoorthy, A.V.11
Asghari, M.12
-
10
-
-
78149277748
-
High-speed and compact silicon modulator based on a racetrack resonator with a 1 V drive voltage
-
P. Dong, S. Liao, H. Liang, W. Qian, X. Wang, R. Shafiiha, D. Feng, G. Li, X. Zheng, A. V. Krishnamoorthy, and M. Asghari, “High-speed and compact silicon modulator based on a racetrack resonator with a 1 V drive voltage,” Opt. Lett. 35(19), 3246-3248 (2010).
-
(2010)
Opt. Lett.
, vol.35
, Issue.19
, pp. 3246-3248
-
-
Dong, P.1
Liao, S.2
Liang, H.3
Qian, W.4
Wang, X.5
Shafiiha, R.6
Feng, D.7
Li, G.8
Zheng, X.9
Krishnamoorthy, A.V.10
Asghari, M.11
-
11
-
-
80053991083
-
25Gb/s 1V-driving CMOS ring modulator with integrated thermal tuning
-
G. Li, X. Zheng, J. Yao, H. Thacker, I. Shubin, Y. Luo, K. Raj, J. E. Cunningham, and A. V. Krishnamoorthy, “25Gb/s 1V-driving CMOS ring modulator with integrated thermal tuning,” Opt. Express 19(21), 20435-20443 (2011).
-
(2011)
Opt. Express
, vol.19
, Issue.21
, pp. 20435-20443
-
-
Li, G.1
Zheng, X.2
Yao, J.3
Thacker, H.4
Shubin, I.5
Luo, Y.6
Raj, K.7
Cunningham, J.E.8
Krishnamoorthy, A.V.9
-
12
-
-
79960501785
-
Ten Gbit/s ring resonator silicon modulator based on interdigitated PN junctions
-
M. Ziebell, D. Marris-Morini, G. Rasigade, P. Crozat, J.-M. Fedeli, P. Grosse, E. Cassan, and L. Vivien, “Ten Gbit/s ring resonator silicon modulator based on interdigitated PN junctions,” Opt. Express 19(15), 14690-14695 (2011).
-
(2011)
Opt. Express
, vol.19
, Issue.15
, pp. 14690-14695
-
-
Ziebell, M.1
Marris-Morini, D.2
Rasigade, G.3
Crozat, P.4
Fedeli, J.-M.5
Grosse, P.6
Cassan, E.7
Vivien, L.8
-
13
-
-
80054909622
-
Vertical junction silicon microdisk modulators and switches
-
M. R. Watts, W. A. Zortman, D. C. Trotter, R. W. Young, and A. L. Lentine, “Vertical junction silicon microdisk modulators and switches,” Opt. Express 19(22), 21989-22003 (2011).
-
(2011)
Opt. Express
, vol.19
, Issue.22
, pp. 21989-22003
-
-
Watts, M.R.1
Zortman, W.A.2
Trotter, D.C.3
Young, R.W.4
Lentine, A.L.5
-
14
-
-
46349093650
-
Waveguide-integrated, ultralow-energy GeSi electro-absorption modulators
-
J. Liu, M. Beals, A. Pomerene, S. Bernardis, R. Sun, J. Cheng, L. C. Kimerling, and J. Michel, “Waveguide-integrated, ultralow-energy GeSi electro-absorption modulators,” Nat. Photonics 2(7), 433-437 (2008).
-
(2008)
Nat. Photonics
, vol.2
, Issue.7
, pp. 433-437
-
-
Liu, J.1
Beals, M.2
Pomerene, A.3
Bernardis, S.4
Sun, R.5
Cheng, J.6
Kimerling, L.C.7
Michel, J.8
-
15
-
-
79953900849
-
30GHz Ge electro-absorption modulator integrated with 3 pm silicon-on-insulator waveguide
-
N.-N. Feng, D. Feng, S. Liao, X. Wang, P. Dong, H. Liang, C.-C. Kung, W. Qian, J. Fong, R. Shafiiha, Y. Luo, J. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “30GHz Ge electro-absorption modulator integrated with 3 pm silicon-on-insulator waveguide,” Opt. Express 19(8), 7062-7067 (2011).
-
(2011)
Opt. Express
, vol.19
, Issue.8
, pp. 7062-7067
-
-
Feng, N.-N.1
Feng, D.2
Liao, S.3
Wang, X.4
Dong, P.5
Liang, H.6
Kung, C.-C.7
Qian, W.8
Fong, J.9
Shafiiha, R.10
Luo, Y.11
Cunningham, J.12
Krishnamoorthy, A.V.13
Asghari, M.14
-
16
-
-
79955381463
-
Design and fabrication of 3pm silicon-on-insulator waveguide integrated Ge electro-absorption modulator
-
N.-N. Feng, S. Liao, D. Feng, X. Wang, P. Dong, H. Liang, C.-C. Kung, W. Qian, Y. Liu, J. Fong, R. Shafiiha, Y. Luo, J. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “Design and fabrication of 3pm silicon-on-insulator waveguide integrated Ge electro-absorption modulator,” Opt. Express 19(9), 8715-8720 (2011).
-
(2011)
Opt. Express
, vol.19
, Issue.9
, pp. 8715-8720
-
-
Feng, N.-N.1
Liao, S.2
Feng, D.3
Wang, X.4
Dong, P.5
Liang, H.6
Kung, C.-C.7
Qian, W.8
Liu, Y.9
Fong, J.10
Shafiiha, R.11
Luo, Y.12
Cunningham, J.13
Krishnamoorthy, A.V.14
Asghari, M.15
-
17
-
-
79959932836
-
Novel evanescent-coupled germanium electro-absorption modulator featuring monolithic integration with germanium p-i-n photodetector
-
A. E.-J. Lim, T.-Y. Liow, F. Qing, N. Duan, L. Ding, M. Yu, G.-Q. Lo, and D.-L. Kwong, “Novel evanescent-coupled germanium electro-absorption modulator featuring monolithic integration with germanium p-i-n photodetector,” Opt. Express 19(6), 5040-5046 (2011).
-
(2011)
Opt. Express
, vol.19
, Issue.6
, pp. 5040-5046
-
-
Lim, A.E.1
Liow, T.-Y.2
Qing, F.3
Duan, N.4
Ding, L.5
Yu, M.6
Lo, G.-Q.7
Kwong, D.-L.8
-
18
-
-
34247890192
-
Optical modulator on silicon employing germanium quantum wells
-
J. E. Roth, O. Fidaner, R. K. Schaevitz, Y.-H. Kuo, T. I. Kamins, J. S. Harris, and D. A. B. Miller, “Optical modulator on silicon employing germanium quantum wells,” Opt. Express 15(9), 5851-5859 (2007).
-
(2007)
Opt. Express
, vol.15
, Issue.9
, pp. 5851-5859
-
-
Roth, J.E.1
Fidaner, O.2
Schaevitz, R.K.3
Kuo, Y.-H.4
Kamins, T.I.5
Harris, J.S.6
Miller, D.A.B.7
-
19
-
-
37249072357
-
C-band side-entry Ge quantum-well electroabsorption modulator on SOI operating at 1 V swing
-
J. E. Roth, O. Fidaner, E. H. Edwards, R. K. Schaevitz, Y.-H. Kuo, N. C. Helman, T. I. Kamins, J. S. Harris, and D. A. B. Miller, “C-band side-entry Ge quantum-well electroabsorption modulator on SOI operating at 1 V swing,” Electron. Lett. 44(1), 49-50 (2008).
-
(2008)
Electron. Lett.
, vol.44
, Issue.1
, pp. 49-50
-
-
Roth, J.E.1
Fidaner, O.2
Edwards, E.H.3
Schaevitz, R.K.4
Kuo, Y.-H.5
Helman, N.C.6
Kamins, T.I.7
Harris, J.S.8
Miller, D.A.B.9
-
20
-
-
77957593744
-
Si-Ge surface-normal asymmetric Fabry-Perot electro-absorption modulator
-
May, San Jose, CA, Paper CTuA5
-
E. H. Edwards, R. M. Audet, S. A. Claussen, R. K. Schaevitz, E. Tasyurek, S. Ren, O. I. Dosunmu, M. S. Ünlü, and D. A. B. Miller, “Si-Ge surface-normal asymmetric Fabry-Perot electro-absorption modulator,” CLEO (May 16-21, 2010), San Jose, CA, Paper CTuA5.
-
(2010)
CLEO
, pp. 16-21
-
-
Edwards, E.H.1
Audet, R.M.2
Claussen, S.A.3
Schaevitz, R.K.4
Tasyurek, E.5
Ren, S.6
Dosunmu, O.I.7
Ünlü, M.S.8
Miller, D.A.B.9
-
21
-
-
84863012077
-
Investigation of limits to the optical performance of asymmetric Fabry-Perot electroabsorption modulators
-
R. M. Audet, E. H. Edwards, P. Wahl, and D. A. B. Miller, “Investigation of limits to the optical performance of asymmetric Fabry-Perot electroabsorption modulators,” IEEE J. Quantum Electron. 48(2), 198-209 (2012).
-
(2012)
IEEE J. Quantum Electron.
, vol.48
, Issue.2
, pp. 198-209
-
-
Audet, R.M.1
Edwards, E.H.2
Wahl, P.3
Miller, D.A.B.4
-
22
-
-
80053517811
-
Indirect absorption in germanium quantum wells
-
R. K. Schaevitz, D. S. Ly-Gagnon, J. E. Roth, E. H. Edwards, and D. A. B. Miller, “Indirect absorption in germanium quantum wells,” AIP Advances 1(3), 032164 (2011).
-
(2011)
AIP Advances
, vol.1
, Issue.3
, pp. 32164
-
-
Schaevitz, R.K.1
Ly-Gagnon, D.S.2
Roth, J.E.3
Edwards, E.H.4
Miller, D.A.B.5
-
23
-
-
84863012136
-
Simple electroabsorption calculator for designing 1310nm and 1550nm modulators using germanium quantum wells
-
R. K. Schaevitz, E. H. Edwards, J. E. Roth, E. T. Fei, Y. Rong, P. Wahl, T. I. Kamins, J. S. Harris, and D. A. B. Miller, “Simple electroabsorption calculator for designing 1310nm and 1550nm modulators using germanium quantum wells,” IEEE J. Quantum Electron. 48(2), 187-197 (2012).
-
(2012)
IEEE J. Quantum Electron.
, vol.48
, Issue.2
, pp. 187-197
-
-
Schaevitz, R.K.1
Edwards, E.H.2
Roth, J.E.3
Fei, E.T.4
Rong, Y.5
Wahl, P.6
Kamins, T.I.7
Harris, J.S.8
Miller, D.A.B.9
-
24
-
-
81355136237
-
Ge quantum well resonator modulators
-
Photonics, London, Sept. 2011, Paper
-
E. H. Edwards, R. M. Audet, E. Fei, G. Shambat, R. K. Schaevitz, Y. Rong, S. A. Claussen, T. I. Kamins, J. Vuckovic, J. S. Harris, and D. A. B. Miller, “Ge quantum well resonator modulators,” 8th Int. Conf. Group IV Photonics, London, Sept. 2011, Paper P1.9.
-
8Th Int. Conf. Group IV
, vol.P1
, pp. 9
-
-
Edwards, E.H.1
Audet, R.M.2
Fei, E.3
Shambat, G.4
Schaevitz, R.K.5
Rong, Y.6
Claussen, S.A.7
Kamins, T.I.8
Vuckovic, J.9
Harris, J.S.10
Miller, D.A.B.11
-
25
-
-
84863116253
-
Ge/SiGe quantum well waveguide modulator monolithically integrated with SOI waveguides
-
S. Ren, Y. Rong, S. A. Claussen, R. K. Schaevitz, T. I. Kamins, J. S. Harris, and D. A. B. Miller, “Ge/SiGe quantum well waveguide modulator monolithically integrated with SOI waveguides,” IEEE Photon. Technol. Lett. 24(6), 461-463 (2012).
-
(2012)
IEEE Photon. Technol. Lett.
, vol.24
, Issue.6
, pp. 461-463
-
-
Ren, S.1
Rong, Y.2
Claussen, S.A.3
Schaevitz, R.K.4
Kamins, T.I.5
Harris, J.S.6
Miller, D.A.B.7
-
26
-
-
79952150952
-
Silicon-polymer hybrid slot waveguide ring-resonator modulator
-
M. Gould, T. Baehr-Jones, R. Ding, S. Huang, J. Luo, A. K.-Y. Jen, J.-M. Fedeli, M. Fournier, and M. Hochberg, “Silicon-polymer hybrid slot waveguide ring-resonator modulator,” Opt. Express 19(5), 3952-3961 (2011).
-
(2011)
Opt. Express
, vol.19
, Issue.5
, pp. 3952-3961
-
-
Gould, M.1
Baehr-Jones, T.2
Ding, R.3
Huang, S.4
Luo, J.5
Jen, A.K.6
Fedeli, J.-M.7
Fournier, M.8
Hochberg, M.9
-
27
-
-
0000537477
-
Optical absorption in the presence of a uniform field
-
K. Tharmalingam, “Optical absorption in the presence of a uniform field,” Phys. Rev. 130(6), 2204-2206 (1963).
-
(1963)
Phys. Rev.
, vol.130
, Issue.6
, pp. 2204-2206
-
-
Tharmalingam, K.1
-
28
-
-
33748848767
-
Electroabsorption in semiconductors: The excitonic absorption edge
-
J. D. Dow and D. Redfield, “Electroabsorption in semiconductors: the excitonic absorption edge,” Phys. Rev. B 1(8), 3358-3371 (1970).
-
(1970)
Phys. Rev. B
, vol.1
, Issue.8
, pp. 3358-3371
-
-
Dow, J.D.1
Redfield, D.2
-
29
-
-
0000856206
-
Relation between electroabsorption in bulk semiconductors and in quantum wells: The quantum-confined Franz-Keldysh effect
-
D. A. B. Miller, D. S. Chemla, and S. Schmitt-Rink, “Relation between electroabsorption in bulk semiconductors and in quantum wells: The quantum-confined Franz-Keldysh effect,” Phys. Rev. B Condens. Matter 33(10), 6976-6982 (1986).
-
(1986)
Phys. Rev. B Condens. Matter
, vol.33
, Issue.10
, pp. 6976-6982
-
-
Miller, D.A.B.1
Chemla, D.S.2
Schmitt-Rink, S.3
-
30
-
-
33646657680
-
Electric field dependence of optical absorption near the bandgap of quantum well structures
-
D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, “Electric field dependence of optical absorption near the bandgap of quantum well structures,” Phys. Rev. B 32(2), 1043-1060 (1985).
-
(1985)
Phys. Rev. B
, vol.32
, Issue.2
, pp. 1043-1060
-
-
Miller, D.A.B.1
Chemla, D.S.2
Damen, T.C.3
Gossard, A.C.4
Wiegmann, W.5
Wood, T.H.6
Burrus, C.A.7
-
31
-
-
27644490697
-
Strong quantum-confined Stark effect in germanium quantum-well structures on silicon
-
Y.-H. Kuo, Y.-K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. B. Miller, and J. S. Harris, “Strong quantum-confined Stark effect in germanium quantum-well structures on silicon,” Nature 437(7063), 1334-1336 (2005).
-
(2005)
Nature
, vol.437
, Issue.7063
, pp. 1334-1336
-
-
Kuo, Y.-H.1
Lee, Y.-K.2
Ge, Y.3
Ren, S.4
Roth, J.E.5
Kamins, T.I.6
Miller, D.A.B.7
Harris, J.S.8
-
32
-
-
33845640876
-
Quantum-confined Stark effect in Ge/SiGe quantum wells on Si for optical modulators
-
Y.-H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. B. Miller, and J. S. Harris, Jr., “Quantum-confined Stark effect in Ge/SiGe quantum wells on Si for optical modulators,” IEEE J. Sel. Top. Quantum Electron. 12(6), 1503-1513 (2006).
-
(2006)
IEEE J. Sel. Top. Quantum Electron
, vol.12
, Issue.6
, pp. 1503-1513
-
-
Kuo, Y.-H.1
Lee, Y.K.2
Ge, Y.3
Ren, S.4
Roth, J.E.5
Kamins, T.I.6
Miller, D.A.B.7
Harris, J.S.8
-
33
-
-
48949099190
-
Material properties in Si-Ge/Ge quantum wells
-
R. K. Schaevitz, J. E. Roth, S. Ren, O. Fidaner, and D. A. B. Miller, “Material properties in Si-Ge/Ge quantum wells,” IEEE J. Sel. Top. Quantum Electron. 14(4), 1082-1089 (2008).
-
(2008)
IEEE J. Sel. Top. Quantum Electron.
, vol.14
, Issue.4
, pp. 1082-1089
-
-
Schaevitz, R.K.1
Roth, J.E.2
Ren, S.3
Fidaner, O.4
Miller, D.A.B.5
-
34
-
-
5444275992
-
Si/SiGe heterostructures: From material and physics to devices and circuits
-
D. J. Paul, “Si/SiGe heterostructures: from material and physics to devices and circuits,” Semicond. Sci. Technol. 19(10), R75-R108 (2004).
-
(2004)
Semicond. Sci. Technol.
, vol.19
, Issue.10
, pp. R75-R108
-
-
Paul, D.J.1
-
35
-
-
0024755249
-
GaAs-AlGaAs multiquantum well reflection modulators grown on GaAs and silicon substrates
-
K. W. Goossen, G. D. Boyd, J. E. Cunningham, W. Y. Jan, D. A. B. Miller, D. S. Chemla, and R. M. Lum, “GaAs-AlGaAs multiquantum well reflection modulators grown on GaAs and silicon substrates,” IEEE Photon. Technol. Lett. 1(10), 304-306 (1989).
-
(1989)
IEEE Photon. Technol. Lett.
, vol.1
, Issue.10
, pp. 304-306
-
-
Goossen, K.W.1
Boyd, G.D.2
Cunningham, J.E.3
Jan, W.Y.4
Miller, D.A.B.5
Chemla, D.S.6
Lum, R.M.7
-
36
-
-
79954585510
-
Selective epitaxial growth of Ge/Si0.15Ge0.85 quantum wells on Si substrate using reduced pressure chemical vapor deposition
-
S. Ren, Y. Rong, T. I. Kamins, J. S. Harris, and D. A. B. Miller, “Selective epitaxial growth of Ge/Si0.15Ge0.85 quantum wells on Si substrate using reduced pressure chemical vapor deposition,” Appl. Phys. Lett. 98(15), 151108 (2011).
-
(2011)
Appl. Phys. Lett
, vol.98
, Issue.15
, pp. 151108
-
-
Ren, S.1
Rong, Y.2
Kamins, T.I.3
Harris, J.S.4
Miller, D.A.B.5
-
37
-
-
78649983189
-
In quest of the “next switch: Prospects for greatly reduced power dissipation in a successor to the silicon field-effect transistor
-
T. N. Theis and P. M. Solomon, “In quest of the “next switch”: prospects for greatly reduced power dissipation in a successor to the silicon field-effect transistor,” Proc. IEEE 98(12), 2005-2014 (2010).
-
(2010)
Proc. IEEE
, vol.98
, Issue.12
, pp. 2005-2014
-
-
Theis, T.N.1
Solomon, P.M.2
-
38
-
-
79954598416
-
Green optical communications-part I: Energy limitations in transport
-
R. S. Tucker, “Green optical communications-part I: energy limitations in transport,” IEEE J. Sel. Top. Quantum Electron. 17(2), 245-260 (2011).
-
(2011)
IEEE J. Sel. Top. Quantum Electron.
, vol.17
, Issue.2
, pp. 245-260
-
-
Tucker, R.S.1
-
39
-
-
0026243083
-
Quantum well carrier sweep out: Relation to electroabsorption and exciton saturation
-
A. M. Fox, D. A. B. Miller, G. Livescu, J. E. Cunningham, and W. Y. Jan, “Quantum well carrier sweep out: relation to electroabsorption and exciton saturation,” IEEE J. Quantum Electron. 27(10), 2281-2295 (1991).
-
(1991)
IEEE J. Quantum Electron.
, vol.27
, Issue.10
, pp. 2281-2295
-
-
Fox, A.M.1
Miller, D.A.B.2
Livescu, G.3
Cunningham, J.E.4
Jan, W.Y.5
-
40
-
-
0026941016
-
Simultaneous measurements of electron and hole sweep-out from quantum wells and modeling of photoinduced field screening dynamics
-
J. A. Cavailles, D. A. B. Miller, J. E. Cunningham, P. Li Kam Wa, and A. Miller, “Simultaneous measurements of electron and hole sweep-out from quantum wells and modeling of photoinduced field screening dynamics,” IEEE J. Quantum Electron. 28(10), 2486-2497 (1992).
-
(1992)
IEEE J. Quantum Electron.
, vol.28
, Issue.10
, pp. 2486-2497
-
-
Cavailles, J.A.1
Miller, D.A.B.2
Cunningham, J.E.3
Li Kam Wa, P.4
Miller, A.5
-
41
-
-
78650065543
-
Measurement and modeling of ultrafast carrier dynamics and transport in germanium/silicon-germanium quantum wells
-
S. A. Claussen, E. Tasyurek, J. E. Roth, and D. A. B. Miller, “Measurement and modeling of ultrafast carrier dynamics and transport in germanium/silicon-germanium quantum wells,” Opt. Express 18(25), 25596-25607 (2010).
-
(2010)
Opt. Express
, vol.18
, Issue.25
, pp. 25596-25607
-
-
Claussen, S.A.1
Tasyurek, E.2
Roth, J.E.3
Miller, D.A.B.4
-
42
-
-
0028731787
-
Experimental studies of proton-implanted GaAs-AlGaAs multiple-quantum-well modulators for low-photocurrent applications
-
T. K. Woodward, W. H. Knox, B. Tell, A. Vinattieri, and M. T. Asom, “Experimental studies of proton-implanted GaAs-AlGaAs multiple-quantum-well modulators for low-photocurrent applications,” IEEE J. Quantum Electron. 30(12), 2854-2865 (1994).
-
(1994)
IEEE J. Quantum Electron.
, vol.30
, Issue.12
, pp. 2854-2865
-
-
Woodward, T.K.1
Knox, W.H.2
Tell, B.3
Vinattieri, A.4
Asom, M.T.5
-
43
-
-
42649143788
-
A 90 nm CMOS 16 Gb/s transceiver for optical interconnects
-
S. Palermo, A. Emami-Neyestanak, and M. Horowitz, “A 90 nm CMOS 16 Gb/s transceiver for optical interconnects,” IEEE J. Solid-state Circuits 43(5), 1235-1246 (2008).
-
(2008)
IEEE J. Solid-State Circuits
, vol.43
, Issue.5
, pp. 1235-1246
-
-
Palermo, S.1
Emami-Neyestanak, A.2
Horowitz, M.3
-
44
-
-
0000581705
-
Electroabsorption in GaAs/AlGaAs coupled quantum well waveguides
-
M. N. Islam, R. L. Hillman, D. A. B. Miller, D. S. Chemla, A. C. Gossard, and J. H. English, “Electroabsorption in GaAs/AlGaAs coupled quantum well waveguides,” Appl. Phys. Lett. 50(16), 1098-1100 (1987).
-
(1987)
Appl. Phys. Lett.
, vol.50
, Issue.16
, pp. 1098-1100
-
-
Islam, M.N.1
Hillman, R.L.2
Miller, D.A.B.3
Chemla, D.S.4
Gossard, A.C.5
English, J.H.6
-
45
-
-
84939050028
-
-
Paper MB3, Topical Meeting on Quantum Optoelectronics, Salt Lake City, March 1991, Optical Society of America
-
K. W. Goossen, J. E. Cunningham, D. A. B. Miller, W. Y. Jan, A. L. Lentine, A. M. Fox, and N. K. Ailawadi, “Low field electroabsorption and self-biased self-electrooptic effect device using slightly asymmetric coupled quantum wells,” Paper MB3, Topical Meeting on Quantum Optoelectronics, Salt Lake City, March 1991 (Optical Society of America, 1991).
-
(1991)
Low Field Electroabsorption and Self-Biased Self-Electrooptic Effect Device Using Slightly Asymmetric Coupled Quantum Wells
-
-
Goossen, K.W.1
Cunningham, J.E.2
Miller, D.A.B.3
Jan, W.Y.4
Lentine, A.L.5
Fox, A.M.6
Ailawadi, N.K.7
-
46
-
-
0023129296
-
Low voltage modulator and self-biased self-electro-optic effect device
-
J. S. Weiner, A. C. Gossard, J. H. English, D. A. B. Miller, D. S. Chemla, and C. A. Burrus, “Low voltage modulator and self-biased self-electro-optic effect device,” Electron. Lett. 23(2), 75-77 (1987).
-
(1987)
Electron. Lett.
, vol.23
, Issue.2
, pp. 75-77
-
-
Weiner, J.S.1
Gossard, A.C.2
English, J.H.3
Miller, D.A.B.4
Chemla, D.S.5
Burrus, C.A.6
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