Electrical and photosensitive characteristics of a-IGZO TFTs related to oxygen vacancy

IEEE Transactions on Electron Devices

Volumn 58, Issue 4, 2011, Pages 1121-1126

  Yao, Jianke ^a   Xu, Ningsheng ^a   Deng, Shaozhi ^a   Chen, Jun ^a   She, Juncong ^a   Shieh, Han Ping David ^b   Liu, Po Tsun ^b   Huang, Yi Pai ^b  

^a SUN YAT SEN UNIVERSITY   (China)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Absorption; amorphous indiumgalliumzincoxide (a IGZO) thin film transistor (TFT); electrical and photosensitive characteristics; oxygen vacancies

Indexed keywords

ELECTRICAL AND PHOTOSENSITIVE CHARACTERISTICS; ELECTRICAL STABILITY; ELECTRON DENSITIES; INTERFACE DEFECTS; LIGHT INTENSITY; LIGHT-INDUCED CHANGES; ON-CURRENTS; PHOTOREACTIONS; SATURATION MOBILITY; SUBTHRESHOLD SLOPE; TIME CONSTANTS;

ABSORPTION; AMORPHOUS FILMS; DEFECT DENSITY; LIGHT SENSITIVE MATERIALS; OXYGEN; PHOTOSENSITIVITY; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM TRANSISTORS; VACANCIES;

OXYGEN VACANCIES;

EID: 79953104672     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2105879     Document Type: Article

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