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Volumn 96, Issue 20, 2010, Pages

Effect of oxygen partial pressure on the Fermi level of ZnO1-x films fabricated by pulsed laser deposition

(12) Min, Chul Hee a Cho, Suyeon a Lee, Seung Hyuk a Cho, Deok Yong a Park, Won Goo a Chung, Jae Gwan b Lee, Eunha b Lee, Jae Cheol b Anass, Benayad b Lee, Jae Hak b Hwang, Cheol Seong a Oh, Se Jung a

a Seoul National University (South Korea)

b Samsung Advanced Institute of Technology (SAIT) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EFFECT OF OXYGEN; IN-SITU; INFLUENCE OF OXYGEN; OXYGEN DEFICIENCY; OXYGEN PARTIAL PRESSURE; ZNO; ZNO FILMS; ZNO THIN FILM;

DEPOSITION; FERMI LEVEL; FERMIONS; GRAIN BOUNDARIES; METALLIC FILMS; OPTICAL FILMS; OXYGEN; PARTIAL PRESSURE; PHOTOELECTRICITY; PHOTOIONIZATION; PHOTONS; POSITIVE IONS; PRESSURE EFFECTS; PROGRAMMABLE LOGIC CONTROLLERS; PULSED LASER DEPOSITION; THIN FILMS; ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

PULSED LASERS;

EID: 77952983559 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3432398 Document Type: Article

Times cited : (38)

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