Photoluminescence and defect evolution of nano-ZnO thin films at low temperature annealing

Science China Technological Sciences

Volumn 56, Issue 1, 2013, Pages 25-31

  Yang, Ailing ^a   Yang, Yun ^a   Zhang, Zhenzhen ^a   Bao, Xichang ^b   Yang, Renqiang ^b   Li, Shunpin ^a   Sun, Liang ^b  

^a OCEAN UNIVERSITY OF CHINA   (China)

^b QINGDAO INSTITUTE OF BIOENERGY AND BIOPROCESS TECHNOLOGY   (China)

Author keywords

defects; low temperature annealing; nano ZnO thin films; PL spectra

Indexed keywords

ANNEALING; DEFECTS; ELECTRON TRANSPORT PROPERTIES; II-VI SEMICONDUCTORS; METALLIC FILMS; OPTICAL FILMS; ORGANIC SOLAR CELLS; OXIDE MINERALS; OXYGEN VACANCIES; SOL-GEL PROCESS; SOL-GELS; TEMPERATURE; ZINC; ZINC OXIDE;

DEFECT EVOLUTION; ELECTRON TRANSPORT LAYERS; GREEN LUMINESCENCE; LOW TEMPERATURE ANNEALING; NANO-ZNO; OXYGEN INTERSTITIALS; PL SPECTRA; SILICON SUBSTRATES;

THIN FILMS;

EID: 84872594684     PISSN: 16747321     EISSN: 18691900     Source Type: Journal    
DOI: 10.1007/s11431-012-5064-6     Document Type: Article

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