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Physica B: Condensed Matter

Volumn 404, Issue 23-24, 2009, Pages 4813-4815

On quantum efficiency of photoluminescence in ZnO layers and nanostructures

(5) Reshchikov, M A a El Shaer, A b Behrends, A b Bakin, A b Waag, A b

a VIRGINIA COMMONWEALTH UNIVERSITY (United States)

b TECHNICAL UNIVERSITY OF BRAUNSCHWEIG (Germany)

Author keywords

Photoluminescence; Quantum efficiency; Quantum wells; ZnO

Indexed keywords

EXTERNAL QUANTUM EFFICIENCY; HOMOEPITAXIAL LAYERS; LOW TEMPERATURES; MOCVD; ORDERS OF MAGNITUDE; PHOTOLUMINESCENCE QUANTUM EFFICIENCY; PL BANDS; QUANTUM WELL; SAPPHIRE SUBSTRATES; SINGLE QUANTUM WELL STRUCTURES; ZNO; ZNO LAYERS; ZNO NANOWIRES; ZNO SUBSTRATE;

CHEMICAL VAPOR DEPOSITION; NANOWIRES; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; ZINC; ZINC OXIDE;

QUANTUM EFFICIENCY;

EID: 74349119935 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/j.physb.2009.08.173 Document Type: Article

Times cited : (5)

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