Near milliwatt power AlGaN-based ultraviolet light emitting diodes based on lateral epitaxial overgrowth of AlN on Si(111)

Applied Physics Letters

Volumn 102, Issue 1, 2013, Pages

  Zhang, Yinjun ^a   Gautier, Simon ^a   Cho, Chu Young ^a   Cicek, Erdem ^a   Vashaei, Zahra ^a   McClintock, Ryan ^a   Bayram, Can ^b   Bai, Yanbo ^a   Razeghi, M ^a  

^a Northwestern University   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; ALN LAYERS; DEVICE CHARACTERIZATION; FLIP CHIP; LATERAL EPITAXIAL OVERGROWTH; PULSED-POWER; SI (1 1 1); SI(111) SUBSTRATE; SLOPE EFFICIENCIES; TOP-EMISSION; ULTRA-VIOLET; ULTRAVIOLET LIGHT EMITTING DIODES; UV LEDS;

EPITAXIAL GROWTH; FABRICATION; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SILICON;

LIGHT EMITTING DIODES;

EID: 84872303750     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4773565     Document Type: Article

References (17)

1. Y. Zhu, A. Watanabe, L. Lu, Z. Chen, and T. Egawa, Jpn. J. Appl. Phys., Part 1 51, 01AG02 (2012). 10.1143/JJAP.51.01AG02
2. D. Deng, N. Yu, Y. Wang, X. Zou, H. Kuo, P. Chen, and K. M. Lau, Appl. Phys. Lett. 96, 201106 (2010). 10.1063/1.3427438
3. Y. Hsiao, L. Lu, C. Wu, E. Chang, C. Kuo, J. Maa, K. Lin, T. Luong, W. Huang, C. Chang, Jpn. J. Appl. Phys., Part 1 51, 025505 (2012). 10.1143/JJAP.51.025505
4. A. Dadgar, C. Hums, A. Diez, J. Blasing, and A. Krost, J. Cryst. Growth 297, 279 (2006). 10.1016/j.jcrysgro.2006.09.032
5. P. Kung, D. Walker, M. Hamilton, J. Diaz, and M. Razeghi, Appl. Phys. Lett. 74, 570 (1999). 10.1063/1.123148
6. K. Nagamatsu, N. Okada, H. Sugimura, H. Tsuzuki, F. Mori, K. Iida, A. Bando, M. Iwaya, S. Kamiyama, H. Amano, J. Cryst. Growth 310, 2326 (2008). 10.1016/j.jcrysgro.2007.11.152
7. R. Jain, W. Sun, J. Yang, M. Shatalov, X. Hu, A. Sattu, A. Lunev, J. Deng, I. Shturm, Y. Bilenko, Appl. Phys. Lett. 93, 051113 (2008). 10.1063/1.2969402
8. V. Kueller, A. Knauer, F. Brunner, U. Zeimer, H. Rodriguez, M. Kneissl, and M. Weyers, J. Cryst. Growth 315, 200 (2011). 10.1016/j.jcrysgro.2010.06.040
9. T. Mino, H. Hirayama, T. Takano, K. Tsubaki, and M. Sugiyama, Appl. Phys. Express 4, 092104 (2011). 10.1143/APEX.4.092104
10. C. Bayram, N. Péré-laperne, R. McClintock, B. Fain, and M. Razeghi, Appl. Phys. Lett. 94, 121902 (2009). 10.1063/1.3104857
11. S. Fujikawa and H. Hirayama, Appl. Phys. Express 4, 061002 (2011). 10.1143/APEX.4.061002
12. K. Mayes, A. Yasan, R. McClintock, D. Shiell, S. R. Darvish, P. Kung, and M. Razeghi, Appl. Phys. Lett. 84, 1046 (2004). 10.1063/1.1647273
13. A. Yasan, R. McClintock, K. Mayes, S. R. Darvish, H. Zhang, P. Kung, M. Razeghi, S. K. Lee, and J. Y. Han, Appl. Phys. Lett. 81, 2151 (2002). 10.1063/1.1508414
14. A. Yasan, R. McClintock, K. Mayes, D. Shiell, L. Gautero, S. R. Darvish, P. Kung, and M. Razeghi, Appl. Phys. Lett. 83, 4701 (2003). 10.1063/1.1633019
15. J. Li, T. N. Oder, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 80, 1210 (2002). 10.1063/1.1450038
16. M. L. Nakarmi, N. Nepal, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 94, 091903 (2009). 10.1063/1.3094754
17. C. Huh, K. Lee, E. Kang, and S. Park, J. Appl. Phys. 93, 9383 (2003). 10.1063/1.1571962