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Japanese Journal of Applied Physics

Volumn 51, Issue 1 PART 2, 2012, Pages

Characterization of gan-based light emitting diodes grown on 4-in. si(111) substrate

(5) Zhu, Youhua a Watanabe, Arata a Lu, Lin a Chen, Zhitao a Egawa, Takashi a

a NAGOYA INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

4-IN. SI; DEVICE PERFORMANCE; HIGH RESOLUTION X RAY DIFFRACTION; LIGHT OUTPUT POWER; MAXIMUM OUTPUT POWER; OPERATING CURRENTS; STRAINED-LAYER SUPERLATTICE;

GALLIUM ALLOYS; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

LIGHT EMITTING DIODES;

EID: 84863182323 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.51.01AG02 Document Type: Conference Paper

Times cited : (3)

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