Waveguide based compact silicon Schottky photodetector with enhanced responsivity in the telecom spectral band

Optics Express

Volumn 20, Issue 27, 2012, Pages 28594-28602

  Goykhman, Ilya ^a   Desiatov, Boris ^a   Khurgin, Jacob ^b   Shappir, Joseph ^a   Levy, Uriel ^a  

^a HEBREW UNIVERSITY OF JERUSALEM   (Israel)

^b Johns Hopkins University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

NANOPHOTONICS; PHOTODETECTORS; PHOTONS; QUANTUM EFFICIENCY; SILICON; SURFACE ROUGHNESS; WAVEGUIDES;

CMOS COMPATIBLE; DETECTION EFFICIENCY; FABRICATION PROCESS; INTERNAL PHOTOEMISSION; INTERNAL QUANTUM EFFICIENCY; ON CHIPS; OPERATION WAVELENGTH; ORDERS OF MAGNITUDE; PHOTONIC WAVEGUIDES; RESPONSIVITY; SCHOTTKY CONTACTS; SCHOTTKY PHOTODETECTORS; SILICON PHOTO-DETECTOR; SPECTRAL BAND; TELECOM; TELECOM WAVELENGTHS;

SILICON OXIDES;

SILICON;

ARTICLE; CHEMISTRY; ELECTRONICS; EQUIPMENT; EQUIPMENT DESIGN; EQUIPMENT FAILURE; PHOTOMETRY; SEMICONDUCTOR; SURFACE PLASMON RESONANCE; TELECOMMUNICATION;

EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MINIATURIZATION; PHOTOMETRY; SEMICONDUCTORS; SILICON; SURFACE PLASMON RESONANCE; TELECOMMUNICATIONS;

EID: 84872036146     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.20.028594     Document Type: Article

References (37)

1. Y. Kang, H.-D. Liu, M. Morse, M. J. Paniccia, M. Zadka, S. Litski, G. Sarid, A. Pauchard, Y.-H. Kuo, H.-W. Chen, W. S. Zaoui, J. E. Bowers, A. Beling, D. C. McIntosh, X. Zheng, and J. C. Campbell, "Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product", Nat. Photonics 3(1), 59-63 (2009).
2. J. Michel, J. Liu, and L. C. Kimerling, "High-performance Ge-on-Si photodetectors", Nat. Photonics 4(8), 527-534 (2010).
3. S. Assefa, F. Xia, and Y. A. Vlasov, "Reinventing germanium avalanche photodetector for nanophotonic on-chip optical interconnects", Nature 464(7285), 80-84 (2010).
4. A. R. Hawkins, W. Wu, P. Abraham, K. Streubel, and J. E. Bowers, "High gain-bandwidth-product silicon heterointerface photodetector", Appl. Phys. Lett. 70(3), 303-305 (1997).
5. Y. Kang, P. Mages, A. R. Clawson, P. K. L. Yu, M. Bitter, Z. Pan, A. Pauchard, S. Hummel, and Y. H. Lo, "Fused InGaAs-si avalanche photodiodes with low-noise performances", IEEE Photon. Technol. Lett. 14(11), 1593-1595 (2002).
6. T. K. Liang, H. K. Tsang, I. E. Day, J. Drake, A. P. Knights, and M. Asghari, "Silicon waveguide two-photon absorption detector at 1.5 μm wavelength for autocorrelation measurements", Appl. Phys. Lett. 81(7), 1323-1325 (2002).
7. T. Tanabe, H. Sumikura, H. Taniyama, A. Shinya, and M. Notomi, "All-silicon sub-Gb/s telecom detector with low dark current and high quantum efficiency on chip", Appl. Phys. Lett. 96, 101103 (2010).
8. J. D. B. Bradley, P. E. Jessop, and A. P. Knights, "Silicon waveguide-integrated optical power monitor with enhanced sensitivity at 1550 nm", Appl. Phys. Lett. 86(24), 241103 (2005).
9. J. J. Ackert, M. Fiorentino, D. F. Logan, R. G. Beausoleil, P. E. Jessop, and A. P. Knights, "Silicon-on-insulator microring resonator defect-based photodetector with 3.5-GHz bandwidth", J. Nanophotonics 5(1), 059507 (2011).
10. K. Preston, Y. H. Lee, M. Zhang, and M. Lipson, "Waveguide- integrated telecom-wavelength photodiode in deposited silicon", Opt. Lett. 36(1), 52-54 (2011).
11. H. Chen, X. Luo, and A. W. Poon, "Cavity-enhanced photocurrent generation by 1.55 μm wavelengths linear absorption in a p-i-n diode embedded silicon microring resonator", Appl. Phys. Lett. 95(17), 171111 (2009).
12. M. Casalino, G. Coppola, M. Iodice, I. Rendina, and L. Sirleto, "Critically coupled silicon Fabry-Perot photodetectors based on the internal photoemission effect at 1550 nm", Opt. Express 20(11), 12599 (2012).
13. D. W. Peters, "An infrared detector utilizing internal photoemission", Proc. IEEE 55(5), 704-705 (1967).
14. S. M. Sze and K. Ng, Kwok, "Physics of Semiconductor Devices", Wiley, New York (2006).
15. S. Zhu, M. B. Yu, G. Q. Lo, and D. L. Kwong, "Near-infrared waveguide-based nickel silicide Schottky-barrier photodetector for optical communications", Appl. Phys. Lett. 92(8), 081103 (2008).
16. M. Casalino, L. Sirleto, M. Iodice, N. Saffioti, M. Gioffrè, I. Rendina, and G. Coppola, "Cu/p-Si schottky barrier-based near infrared photodetector integrated with a silicon-on-insulator waveguide", Appl. Phys. Lett. 96(24), 241112 (2010).
17. J. E. Sipe and J. Becher, "Surface-plasmon-assisted photoemission", J. Opt. Soc. Am. 71(10), 1286-1288 (1981).
18. J. G. Endriz, "Surface waves and grating-tuned photocathodes", Appl. Phys. Lett. 25(5), 261-262 (1974).
19. Y. Wang, X. Su, Y. Zhu, Q. Wang, D. Zhu, J. Zhao, S. Chen, W. Huang, and S. Wu, "Photocurrent in Ag-Si photodiodes modulated by plasmonic nanopatterns", Appl. Phys. Lett. 95(24), 241106 (2009).
20. A. Akbari and P. Berini, "Schottky contact surface-plasmon detector integrated with an asymmetric metal stripe waveguide", Appl. Phys. Lett. 95(2), 021104 (2009).
21. A. Akbari, R. N. Tait, and P. Berini, "Surface plasmon waveguide schottky detector", Opt. Express 18(8), 8505-8514 (2010).
22. I. Goykhman, B. Desiatov, J. Khurgin, J. Shappir, and U. Levy, "Locally oxidized silicon Surface-Plasmon schottky detector for telecom regime", Nano Lett. 11(6), 2219-2224 (2011).
23. T. Aihara, K. Nakagawa, M. Fukuhara, Y. L. Yu, K. Yamaguchi, and M. Fukuda, "Optical frequency signal detection through surface plasmon polaritons", Appl. Phys. Lett. 99(4), 043111 (2011).
24. M. Fukuda, T. Aihara, K. Yamaguchi, Y. Y. Ling, K. Miyaji, and M. Tohyama, "Light detection enhanced by surface plasmon resonance in metal film", Appl. Phys. Lett. 96(15), 153107 (2010).
25. M. W. Knight, H. Sobhani, P. Nordlander, and N. J. Halas, "Photodetection with active optical antennas", Science 332(6030), 702-704 (2011).
26. S. Zhu, H. S. Chu, G. Q. Lo, P. Bai, and D. L. Kwong, "Waveguide-integrated near-infrared detector with self-assembled metal silicide nanoparticles embedded in a silicon p-n junction", Appl. Phys. Lett. 100(6), 061109 (2012).
27. B. Desiatov, I. Goykhman, and U. Levy, "Demonstration of submicron square-like silicon waveguide using optimized LOCOS process", Opt. Express 18, 18592-18597 (2010).
28. P. B. Johnson and R. W. Christy, "Optical constants of the noble metals", Phys. Rev. B 6(12), 4370-4379 (1972).
29. H. Norde, "A modified forward I-V plot for schottky diodes with high series resistance", J. Appl. Phys. 50(7), 5052-5053 (1979).
30. S. K. Cheung and N. W. Cheung, "Extraction of schottky diode parameters from forward current-voltage characteristics", Appl. Phys. Lett. 49(2), 85-87 (1986).
31. K. Sato and Y. Yasumura, "Study of forward I-V plot for schottky diodes with high series resistance", J. Appl. Phys. 58(9), 3655-3657 (1985).
32. H. C. Card, "Aluminum-Silicon schottky barriers and ohmic contacts in integrated circuits", IEEE Trans. Electron. Dev. 23(6), 538-544 (1976).
33. Z. Horváth, M. Ádám, I. Szabó, M. Serényi, and V. Van Tuyen, "Modification of Al/Si interface and schottky barrier height with chemical treatment", Appl. Surf. Sci. 190(1-4), 441-444 (2002).
34. V. M. Shalaev, C. Douketis, J. T. Stuckless, and M. Moskovits, "Light-induced kinetic effects in solids", Phys. Rev. B 53(17), 11388-11402 (1996).
35. I. Schnitzer, E. Yablonovitch, C. Caneau, T. J. Gmitter, and A. Scherer, "30% external quantum efficiency from surface textured, thin-film light-emitting diodes", Appl. Phys. Lett. 63(16), 2174-2176 (1993).
36. T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, "Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening", Appl. Phys. Lett. 84(6), 855-857 (2004).
37. R. H. Horng, S. H. Huang, C. C. Yang, and D. S. Wuu, "Efficiency Improvement of GaN-Based LEDs with ITO Texturing Window Layers Using Natural Lithography", IEEE J. Sel. Top. Quantum Electron. 12(6), 1196-1201 (2006).