High gain-bandwidth-product silicon heterointerface photodetector

Applied Physics Letters

Volumn 70, Issue 3, 1997, Pages 303-305

  Hawkins, Aaron R ^a   Wu, Weishu ^a   Abraham, Patrick ^a   Streubel, Klaus ^a,b   Bowers, John E ^a  

^a University of California   (United States)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; ELECTRIC FIELDS; FABRICATION; FREQUENCY RESPONSE; GAIN MEASUREMENT; QUANTUM EFFICIENCY; REACTIVE ION ETCHING; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR SUPERLATTICES;

AVALANCHE PHOTODETECTORS; GAIN BANDWIDTH PRODUCT; INDIUM GALLIUM ARSENIDE;

INFRARED DETECTORS;

EID: 0030815488     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118399     Document Type: Article

References (6)

1. A. R. Hawkins, T. E. Reynolds, D. R. England, D. I. Babic, M. J. Mondry, K. Streubel, and J. E. Bowers, Appl. Phys. Lett. 68, 3692 (1996).
2. W. Wu, A. R. Hawkins, and J. E. Bowers (unpublished).
3. K. Makita, I. Watanabe, M. Tsaji, and K. Taguchi, Tech. Dig. IOOC'95, Hong Kong, 1995 (unpublished).
4. Calculations done using computer codes VWF, ATLAS, and ATHENA (SILVACO International, Santa Clara, CA, 1995).
5. W. Wu, A. R. Hawkins, and J. E. Bowers, J. Lightwave Technol. 14, 2778 (1996).
6. L. E. Tarof, J. Yu, R. Brace, D. G. Knight, T. Baird, and B. Oosterbrink, IEEE Photonics Technol. Lett. 5, 672 (1993).