Efficiency improvement of GaN-based LEDs with ITO texturing window layers using natural lithography

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 12, Issue 6, 2006, Pages 1196-1200

  Horng, Ray Hua ^a   Huang, Shao Hua ^a   Yang, Chiao Chih ^a,b   Wuu, Dong Sing ^a  

^a NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^b Young Lighting Technology Inc   (Taiwan)

Author keywords

GaN; Indium tin oxide (ITO); Light emitting diode (LED); Natural lithography; Surface texturing

Indexed keywords

ENERGY GAP; ETCHING; GALLIUM NITRIDE; INDIUM COMPOUNDS; LITHOGRAPHY; POLYSTYRENES; QUANTUM EFFICIENCY; REFRACTIVE INDEX;

INDIUM TIN OXIDE (ITO); POLYSTYRENE SPHERES; SURFACE TEXTURING;

LIGHT EMITTING DIODES;

EID: 33845640900     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2006.884060     Document Type: Article

References (12)

1. S. Nakamura, T. Mukai, and M. Senoh, "Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes," Appl. Phys. Lett., vol. 64, pp. 1687-1689, 1994.
2. I. Schnitzer, E. Yablonovitch, C. Caneau, T. J. Gmitter, and A. Scherer, "30% external quantum efficiency from surface textured, thin-film light-emitting diodes," Appl. Phys. Lett., vol. 63, pp. 2174-2176, 1993.
3. R. Windisch, B. Dutta, M. Kuijk, A. Knobloch, S. Meinlschmidt, S. Schoberth, P. Kiesel, G. Borghs/G. H. Dohler, and P. Heremans, "40% efficient thin-film surface-textured light-emitting diodes by optimization of natural lithography," IEEE Trans. Electron Devices, vol. 47, no. 7, pp. 1492-1498, Jul. 2000.
4. R. Windisch, P. Heremans, A. Knobloch, P. Kiesel, G. H. Dohler, B. Dutta, and G. Borghs, "Light-emitting diodes with 31% external quantum efficiency by outcoupling of lateral waveguide modes," Appl. Phys. Lett., vol. 74, pp. 2256-2258, 1999.
5. T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, "Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening," Appl. Phys. Lett., vol. 84, pp. 855-857, 2004.
6. S. M. Pan, R. C. Tu, Y. M. Fan, R. C. Yeh, and J. T. Hsu, "Improvement of InGaN-GaN light-emitting diodes with surface-textured indium-tin-oxide transparent ohmic contacts," IEEE Photon. Technol. Lett., vol. 15, no. 5, pp. 649-651, May 2003.
7. J. M. Lee, C. Huh, D. J. Kim, and S. J. Park, "Dry-etch damage and its recovery in InGaN/GaN multi-quantum-well light-emitting diodes," Semicond. Sci. Technol., vol. 18, pp. 530-534, 2003.
8. R. H. Horng, C. C. Yang, J. Y. Wu, S. H. Huang, C. E. Lee, and D. S. Wuu, "GaN-based light-emitting diodes with indium tin oxide texturing window layers using natural lithography," Appl. Phys. Lett., vol. 86, p. 221101, 2005.
9. X. A. Cao, S. J. Pearton, A. P. Zhang, G. T. Dang, F. Ren, R. J. Shul, L. Zhang, R. Hickman, and J. M. Van Hove, "Effects of interfacial oxides on Schottky barrier contacts to n- and p-type GaN," Appl. Phys. Lett., vol. 75, pp. 2569-2571, 1999.
10. P. E. Dodd, T. B. Stellwag, M. R. Melloch, and M. S. Lundstrom, "Surface and perimeter recombination in GaAs diodes: An experimental and theoretical investigation," IEEE Trans. Electron Devices, vol. 38, no. 6, pp. 1253-1261, Jun. 1991.
11. 4/Ar plasmas," J. Vac. Sci. Technol. B, vol. 13, pp. 27-33, 1995.
12. 4," J. Vac. Sci. Technol. A, vol. 15, pp. 626-632, 1997.