Waveguide-integrated near-infrared detector with self-assembled metal silicide nanoparticles embedded in a silicon p-n junction

Applied Physics Letters

Volumn 100, Issue 6, 2012, Pages

  Zhu, Shiyang ^a   Chu, H S ^b   Lo, G Q ^a   Bai, P ^b   Kwong, D L ^a  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b INSTITUTE OF HIGH PERFORMANCE COMPUTING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGIES; FABRICATION PARAMETERS; INTERNAL PHOTOEMISSION; LOCALIZED SURFACE PLASMON RESONANCE; METAL SILICIDE; NEAR INFRARED; P-N JUNCTION; PEAK RESPONSIVITY; PROOF OF CONCEPT; REVERSE BIAS; SELF-ASSEMBLED; SI P-N JUNCTIONS; SILICON ON INSULATOR WAVEGUIDE; SPACE CHARGE REGIONS; SUBMICRON SCALE; TELECOM;

DETECTORS; SEMICONDUCTOR JUNCTIONS; SILICIDES; SURFACE PLASMON RESONANCE;

METAL NANOPARTICLES;

EID: 84857225817     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3683546     Document Type: Article

References (14)

1. C. Scales and P. Berini, IEEE J. Quantum Electron. 46, 633 (2010). 10.1109/JQE.2010.2046720
2. M. Casalino, G. Coppola, M. Iodice, I. Rendina, and L. Sirleto, Sensors 10, 10571 (2010). 10.3390/s101210571
3. S. Y. Zhu, M. B. Yu, G. Q. Lo, and D. L. Kwong, Appl. Phys. Lett. 92, 081103 (2008). 10.1063/1.2885089 (Pubitemid 351323029)
4. S. Y. Zhu, G. Q. Lo, and D. L. Kwong, IEEE Photon. Technol. Lett. 20, 1396 (2008). 10.1109/LPT.2008.927876
5. S. Y. Zhu, G. Q. Lo, M. B. Yu, and D. L. Kwong, IEEE Photon. Technol. Lett. 21, 185 (2009). 10.1109/LPT.2009.2028898
6. C. Scales, I. Breukelaar, and P. Berini, Opt. Lett. 35, 529 (2010). 10.1364/OL.35.000529
7. R. W. Fathauer, J. M. Lannelli, C. W. Nieh, and S. Hashimoto, Appl. Phys. Lett. 57, 1419 (1990). 10.1063/1.103453
8. R. W. Fathauer, S. M. Dejewski, T. George, E. W. Jones, T. N. Krabach, and A. Ksendzov, Appl. Phys. Lett. 62, 1774 (1993). 10.1063/1.109571
9. F. Raissi, IEEE Trans. Electron Devices 50, 1134 (2003). 10.1109/TED.2003.812087
10. M. I. Stockman, Opt. Express 19, 22029 (2011). 10.1364/OE.19.022029
11. M. Amiotti, A. Borghesi, G. Guizzetti, and F. Nava, Phys. Rev. B 42, 8939 (1990). 10.1103/PhysRevB.42.8939
12. S. Y. Zhu, R. L. Van Meirhaeghe, S. Forment, G. P. Ru, X. P. Qu, and B. Z. Li, Solid-State Electron. 48, 1205 (2004). 10.1016/j.sse.2004.02.006
13. S. Y. Zhu, K. W. Ang, S. C. Rustagi, J. Wang, Y. Z. Xiong, G. Q. Lo, and D. L. Kwong, IEEE Electron Device Lett. 30, 934 (2009). 10.1109/LED.2009.2025782
14. J. Kim, C. S. Han, Y. C. Park, and W. A. Anderson, Appl. Phys. Lett. 92, 043501 (2008). 10.1063/1.2828202 (Pubitemid 351198889)