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Volumn 226, Issue 4, 2001, Pages 493-500
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Initial preferred growth in zinc oxide thin films on Si and amorphous substrates by a pulsed laser deposition
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Author keywords
A1. Interfaces; A2. Growth from vapor; A3. Laser epitaxy; B1. Zinc compounds; B2. Semiconducting III V materials; B3. Heterojunction semiconductor devices
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Indexed keywords
AMORPHOUS MATERIALS;
CRYSTAL ORIENTATION;
ELECTRON DIFFRACTION;
EPITAXIAL GROWTH;
FILM GROWTH;
HIGH RESOLUTION ELECTRON MICROSCOPY;
INTERFACES (MATERIALS);
POLYCRYSTALLINE MATERIALS;
PULSED LASER DEPOSITION;
SEMICONDUCTING SILICON;
SUBSTRATES;
THIN FILMS;
TRANSMISSION ELECTRON MICROSCOPY;
LASER EPITAXY;
ZINC OXIDE;
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EID: 0035427008
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(01)01388-4 Document Type: Article |
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Times cited : (267)
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References (18)
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