Orientation growth and electrical properties of ZnO/BaTiO3 heterostructures on silicon substrates by chemical solution deposition

Journal of Physics D: Applied Physics

Volumn 44, Issue 12, 2011, Pages

  Wei, X H ^a   Yue, M Q ^a   Zhu, J ^b  

^a SOUTHWEST UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE-VOLTAGE CURVE; CHEMICAL SOLUTION DEPOSITION; COERCIVE FIELD; CURRENT VOLTAGE CURVE; ELECTRICAL PROPERTY; FREQUENCY-DEPENDENT; HETEROSTRUCTURES; INTERFACE QUALITY; MEMORY DEVICE; MEMORY WINDOW; METAL-FERROELECTRIC-SEMICONDUCTOR STRUCTURE; N-TYPE SEMICONDUCTORS; ORIENTATION GROWTH; ROOT-MEAN-SQUARE VALUES; SILICON SUBSTRATES; ZNO;

ATOMIC FORCE MICROSCOPY; BARIUM COMPOUNDS; CHEMICALS; CRYSTALS; ELECTRIC PROPERTIES; FERROELECTRIC FILMS; FERROELECTRIC THIN FILMS; FERROELECTRICITY; HYSTERESIS; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION; ZINC OXIDE;

HETEROJUNCTIONS;

EID: 79952926318     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/44/12/125304     Document Type: Article

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