Analysis of v defects in GaN-based light emitting diodes by scanning transmission electron microscopy and electron beam induced current

Applied Physics Letters

Volumn 92, Issue 24, 2008, Pages

  Progl, C L ^a   Parish, C M ^b   Vitarelli, J P ^c   Russell, P E ^d  

^a North Carolina State University   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c Evans Analytical Group   (United States)

^d APPALACHIAN STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBES; CHARGED PARTICLES; ELECTRIC CURRENTS; ELECTRIC FIELD MEASUREMENT; ELECTRON BEAMS; ELECTRON GUNS; ELECTRON MICROSCOPES; ELECTRON MICROSCOPY; ELECTRON OPTICS; ELECTRON SPECTROSCOPY; ELECTRONS; GALLIUM ALLOYS; GALLIUM NITRIDE; IMAGING TECHNIQUES; LIGHT EMISSION; LIGHT EMITTING DIODES; LIGHT SOURCES; MATERIALS SCIENCE; MICROSCOPES; MICROSCOPIC EXAMINATION; PARTICLE BEAMS; SCANNING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY;

(P ,P ,T) MEASUREMENTS; AMERICAN INSTITUTE OF PHYSICS (AIP); ELECTRICAL ACTIVITIES; ELECTRON BEAM INDUCED CURRENT (EBIC) TECHNIQUES; ELECTRON-BEAM-INDUCED CURRENT (EBIC); ELECTRONIC BEHAVIORS; LIGHT EMITTING; MINORITY CARRIER DIFFUSION; MULTIPLE QUANTUM WELL (MQM); P N JUNCTIONS; SCANNING TRANSMISSION ELECTRON MICROSCOPY (STEM); V DEFECTS;

DEFECTS;

EID: 45749155989     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2945232     Document Type: Article

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