Low-voltage cross-sectional EBIC for characterisation of GaN-based light emitting devices

Ultramicroscopy

Volumn 107, Issue 4-5, 2007, Pages 382-389

  Moldovan, Grigore ^a   Kazemian, Payam ^a   Edwards, Paul R ^b   Ong, Vincent K S ^c   Kurniawan, Oka ^c   Humphreys, Colin J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^c NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Diffusion; Dislocations; EBIC; GaN

Indexed keywords

ARGON; CATHODOLUMINESCENCE; CRYSTALLINE MATERIALS; DEFECTS; DIFFUSION; DISLOCATIONS (CRYSTALS); ELECTRON BEAMS; GALLIUM NITRIDE; INDUCED CURRENTS; MULTILAYERS; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM WELLS;

DARK DEFECTS; DELINEATION; ELECTRON BEAM INDUCED CURRENT (EBIC); ION MILLING; MULTI-LAYERED STRUCTURES; MULTI-QUANTUM WELL (MQW);

LIGHT EMITTING DIODES;

ARTICLE; DARKNESS; ELECTRON BEAM; LIGHT EMITTING DIODE; LOW ENERGY RADIATION;

EID: 33846538113     PISSN: 03043991     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ultramic.2006.10.002     Document Type: Article

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