Dislocation controlled wear in single crystal silicon carbide

Journal of Materials Science

Volumn 48, Issue 4, 2013, Pages 1593-1603

  Mishra, Maneesh ^a   Szlufarska, Izabela ^a  

^a University of Wisconsin Madison   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEFORMATION MECHANISM; DEPTH OF CUT; DISLOCATION ACTIVITY; DISLOCATION DENSITIES; DISLOCATION PLASTICITY; FRICTIONAL RESPONSE; HIGH DISLOCATION DENSITY; LOW-DISLOCATION DENSITY; NANOMETER DIMENSIONS; NANOSCALE DEVICE; SINGLE ASPERITY; SINGLE CRYSTAL SILICON; SLIDING DIRECTION; SLIDING INTERFACES; WEAR TRANSITION;

DEFORMATION; ENERGY DISSIPATION; SILICON CARBIDE;

SINGLE CRYSTALS;

EID: 84871762836     PISSN: 00222461     EISSN: 15734803     Source Type: Journal    
DOI: 10.1007/s10853-012-6916-y     Document Type: Article

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