Multimillion-atom nanoindentation simulation of crystalline silicon carbide: Orientation dependence and anisotropic pileup

Journal of Applied Physics

Volumn 102, Issue 6, 2007, Pages

  Chen, Hsiu Pin ^a   Kalia, Rajiv K ^a   Nakano, Aiichiro ^a   Vashishta, Priya ^a   Szlufarska, Izabela ^b  

^a University of Southern California ^*  (United States)

^b University of Wisconsin Madison   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTALLINE MATERIALS; CRYSTALLOGRAPHY; MOLECULAR DYNAMICS; NANOINDENTATION; NUCLEATION;

CRYSTALLINE SILICON CARBIDE; DISLOCATION LOOPS; MULTIMILLION ATOM NANOINDENTATION SIMULATION; VICKERS INDENTERS;

SILICON CARBIDE;

EID: 34948814600     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2781324     Document Type: Article

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