Ductile regime nanpmachining of single-crystal silicon carbide

Journal of Manufacturing Science and Engineering

Volumn 127, Issue 3, 2005, Pages 522-532

  Patten, John ^a   Gao, Wei ^b   Yasuto, Kudo ^b  

^a WESTERN MICHIGAN UNIVERSITY   (United States)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

Crystal Orientation; Cutting Forces; Ductile to Brittle Transition; Nanomachining; SEM TEM Analysis; Single Point Diamond Turning; Surface Finish

Indexed keywords

BRITTLE FRACTURE; BRITTLENESS; CRYSTAL ORIENTATION; DUCTILITY; NANOSTRUCTURED MATERIALS; PHASE TRANSITIONS; REMOVAL; SCANNING ELECTRON MICROSCOPY; SILICON NITRIDE; SINGLE CRYSTALS; TRANSMISSION ELECTRON MICROSCOPY;

CUTTING FORCES; DUCTILE-TO-BRITTLE TRANSITION; NANOMACHINING; SINGLE-POINT DIAMOND TURNING; SURFACE FINISH;

SILICON CARBIDE;

EID: 24644437724     PISSN: 10871357     EISSN: None     Source Type: Journal    
DOI: 10.1115/1.1949614     Document Type: Article

References (29)

1. Morris, J. C., Callahan, D. L., Kulik, J., Patten, J. A., and Scattergood, R. O., 1995, "Origins of the Ductile Regime in Single-Point Diamond Turning of Semiconductor," J. Am. Chem. Soc., 78(8), pp. 2015-20.
2. Gogotsi, Y. G., Kailer, A., and Nickel, K. G., 1997, "Phase Transformations in Materials Studied by Micro-Raman Spectroscopy of Indentations," Mater. Res. Innovations, 1, pp. 3-9.
3. Gilman, J. J., 1993, "Shear Induced Metallization," Philos. Mag. B, 67, pp. 207-214.
4. VanVetchen, A., 1973, "Quantum Dielectric Theory of Electronegativity in Covalent Systems - Part III: Pressure - Temperature Phase Diagrams, Heats of Mixing, and Distribution Coefficients," Phys. Rev. B, 7, pp. 1479-1507.
5. Milman, Y. V., Chugunova, S. I., and Timofeeva, I. I., 2001, "The Resistance of Silicon Carbide to Static and Impact Local Loading," Int. J. Impact Eng., 26, pp. 533-542.
6. Yoshida, M., and Onodera, A., 1993, "Pressure Induced Phase Transitions in SiC," Phys. Rev. B, 48, pp. 10587-10590.
7. Liu, J., and Vohra, Y. K., 1994, "Raman Modes of 6H Polytype of Silicon Carbide to Ultrahigh Pressures: A Comparison With Silicon and Diamond," Phys. Rev. Lett., 72, pp. 4105-4108.
8. Kailer, A., Nickel, K. G., and Gogotsi, Y. G., 1999, "Raman Microspectroscopy of Nanocrystalline and Amorphous Phases in Hardness Indentations," J. Raman Spectrosc., 30, pp. 939-946.
9. Sekine, T., and Kobayashi, T., 1997, "Shock Compression of 6H Polytype SiC to 160 GPa," Phys. Rev. B, 55, p. 8034.
10. Mujica, A., 2003, "High Pressure Phases of Group-IV, III-V, and II-VI Compounds," Rev. Mod. Phys., 75, pp. 863-912.
11. Pirouz, P., 1998, "On Micropipes and Nanopipes in SiC and GaN," Philos. Mag. A, 78, pp. 727-736.
12. Axen, N., Kahlman, L., and Hutchings, I. M., 1997, "Correlations Between Tangential Force and Damage Mechanism in the Scratch Testing of Ceramics," Tribol. Int., 30(7), pp. 467-474.
13. Pharr, G., 2003, Workshop on High Pressure Phase Transformations of Semiconductors and Ceramics, UNC Charlotte, Aug. 20-22.
14. Patten, J., 1996, "High Pressure Phase Transformation Analysis and Molecular Dynamics Simulations of Single Point Diamond Turning of Germanium," Ph.D. dissertation, NCSU, Raleigh, NC.
15. Abdel-Aal, H. A., Smith, S. T., and Patten, J. A., 1997, "On the Development of Surface Temperatures in Precision Single-Point Diamond Abrasion of Semiconductors," Int. Commun. Heat Mass Transfer, 24(8), pp. 1131-1140.
16. Shin, Y., Lei, S., Pfefferkorn, F. E., Rebro, P., and Rozzi, J. C., 2000, "Laser Assisted Machining: Its Potential and Future," Mach. Technol., 11, pp. 1-6.
17. Patten, J., et al., 2003, "Ductile Machining Phenomena of Nominally Brittle Materials at the Nanoscale," 4th Int. Conf. on Intelligent Processing and Manufacturing of Materials, IPMM-2003, May 18-23, Center for Computational Materials Science, Institute for Materials Research, Tohoku University. Sendai, Japan.
18. Gao, W., Kudo, Y., Kiyono, S., and Patten, J., 2004, "Evaluation of an Instrument for Nanomachining and Nanometrology," Int. Symp. On Precision Measurements (ISPMM'2004), Aug. 24-28, Beijing, China.
19. Yan, J., Syoji, K., and Kuriyagawa, T., 2002. Int. J. Jpn. Soc. Precis. Eng., 68, pp. 561-565.
20. Patten, J. A., and Gao, W., 2001, "Extreme Negative Rake Angle Technique for Single Point Diamond Nano-Cutting of Silicon," Precis. Eng., 25, pp. 165-167.
21. Kumbera, T., Patten, J. A., Cherukuri, H., Brand, C. J., and Marusich, T. D., 2001, "Machining Force Analysis for Ductile Machining of Silicon Nitride," J. Manuf. Sci. Technol., 5(3), pp. 341-352.
22. Patten. J., et al., 2003, "High Pressure Phase Transformations of Silicon Nitride," Appl. Phys. Lett., 83, pp. 4740-4742.
23. Blake, P. N., and Scattergood, R. O., 1990, "Ductile-Regime Machining of Germanium and Silicon," J. Am. Chem. Soc., 73, pp. 949-958.
24. Blackley, W. S., and Scattergood, R. O., 1991, "Ductile-Regime Machining Model for Diamond Turning of Brittle Materials," Precis. Eng., 13, pp. 95-103.
25. Wang, J. C., and Hsu, S. M., 1994, "Chemically Assisted Machining of Ceramics," ASME J. Tribol., 116, pp. 423-429.
26. Patten, J., 1998, Proc. ASPE Spring Topical Meeting on Silicon Machining, Vol. 17, pp. 88-91.
27. Patten, J. A., and Mumford, S. V., 2000, Proc. ASPE 2000 Annual Meeting, Vol. 22, pp. 604-607.
28. Chargin. D., 1998, Proc. ASPE Spring Topical Meeting on Silicon Machining, Vol. 17, pp. 59-62.
29. High Pressure Phase Transformations of Semiconductors and Ceramics, http://www.micro.physics.ncsu.edu.