Subsurface damage of single crystalline silicon carbide in nanoindentation tests

Journal of Nanoscience and Nanotechnology

Volumn 10, Issue 11, 2010, Pages 7808-7811

  Yan, Jiwang ^a   Gai, Xiaohui ^a   Harada, Hirofumi ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b Siltronic Japan Corporation   (Japan)

Author keywords

Nanoindentation; Phase Transition; Semiconductor Manufacturing; SiC; Silicon Carbide; Subsurface Damage

Indexed keywords

AMORPHOUS PHASE; AMORPHOUS REGIONS; BASAL PLANE DISLOCATIONS; CROSS SLIPS; DAMAGING MECHANISM; DEPTH OF INDENTATIONS; GRAIN SIZE; INDENTATION DEPTH; INDENTERS; NANOINDENTATION TESTS; NANOINDENTERS; NANOMETER LEVEL; POLYCRYSTALLINE STRUCTURE; SELECTED AREA ELECTRON DIFFRACTION; SEMICONDUCTOR MANUFACTURING; SIC; SINGLE CRYSTALLINE SILICON; SUBSURFACE DAMAGE; TRANSMISSION ELECTRON MICROSCOPE; ULTRA PRECISION MANUFACTURING;

AMORPHOUS SILICON; CRYSTALLINE MATERIALS; MANUFACTURE; MONOCRYSTALLINE SILICON; NANOINDENTATION; PHASE TRANSITIONS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY; UNLOADING; VICKERS HARDNESS TESTING;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79955492281     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2010.2895     Document Type: Conference Paper

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