Memristive operation mode of floating gate transistors: A two-terminal MemFlash-cell

Applied Physics Letters

Volumn 101, Issue 26, 2012, Pages

  Ziegler, M ^a   Oberlander M ^a   Schroeder, D ^b   Krautschneider, W H ^b   Kohlstedt, H ^a  

^a UNIVERSITY OF KIEL   (Germany)

^b HAMBURG UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE FLOW; DEVICE RESISTANCE; FLOATING GATE TRANSISTORS; NEUROMORPHIC CIRCUITS; OPERATION MODE; RECONFIGURABLE LOGIC; SILICON PROCESS TECHNOLOGY; STORAGE CAPABILITY;

PHYSICAL PROPERTIES; PHYSICS;

MEMRISTORS;

EID: 84871762797     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4773300     Document Type: Article

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