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Volumn 3, Issue 4, 2010, Pages
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HiLerformance P-channel diamond metal-oxide-semiconductor field-effect transistors on H-terminated (111) surface
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Author keywords
[No Author keywords available]
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Indexed keywords
CHANNEL MOBILITY;
DIAMOND SURFACES;
GATE-SOURCE VOLTAGE;
HOLE ACCUMULATION;
HOLE CARRIERS;
METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR;
SOURCE AND DRAIN RESISTANCE;
DIAMONDS;
DIELECTRIC DEVICES;
ELECTRIC RESISTANCE;
FIELD EFFECT TRANSISTORS;
HOLE MOBILITY;
ION BEAMS;
MOSFET DEVICES;
DRAIN CURRENT;
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EID: 77950652081
PISSN: 18820778
EISSN: 18820786
Source Type: Journal
DOI: 10.1143/APEX.3.044001 Document Type: Article |
Times cited : (67)
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References (14)
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