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Volumn 3, Issue 4, 2010, Pages

HiLerformance P-channel diamond metal-oxide-semiconductor field-effect transistors on H-terminated (111) surface

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL MOBILITY; DIAMOND SURFACES; GATE-SOURCE VOLTAGE; HOLE ACCUMULATION; HOLE CARRIERS; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; SOURCE AND DRAIN RESISTANCE;

EID: 77950652081     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.3.044001     Document Type: Article
Times cited : (67)

References (14)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.