Scaling of hydrogen-terminated diamond FETs to sub-100-nm gate dimensions

IEEE Electron Device Letters

Volumn 32, Issue 5, 2011, Pages 599-601

  Moran, David A J ^a   Fox, Oliver J L ^b   McLelland, Helen ^a   Russell, Stephen ^a   May, Paul W ^b  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b UNIVERSITY OF BRISTOL   (United Kingdom)

Author keywords

Diamond; field effect transistor (FET); hydrogen terminated; scaling

Indexed keywords

DC OPERATION; DEVICE GATE; FIELD-EFFECT TRANSISTOR (FET); GATE LENGTH; HIGH FREQUENCY PERFORMANCE; HYDROGEN-TERMINATED DIAMOND; INTRINSIC TRANSCONDUCTANCE; MAXIMUM DRAIN CURRENT; PEAK EXTRINSIC TRANSCONDUCTANCE; SCALING;

DIAMONDS; DRAIN CURRENT; HIGH ELECTRON MOBILITY TRANSISTORS; HYDROGEN; MESFET DEVICES; TRANSCONDUCTANCE;

FIELD EFFECT TRANSISTORS;

EID: 79955549260     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2114871     Document Type: Article

References (9)

1. A. Denisenko and E. Kohn, "Diamond power devices. Concepts and limits," Diamond Relat. Mater., vol. 14, no. 3-7, pp. 491-498, Mar.-Jul. 2005. (Pubitemid 40643139)
2. H. Taniuchi, H. Umezawa, T. Arima, M. Tachiki, and H. Kawarada, "High-frequency performance of diamond field-effect transistors," IEEE Electron Device Lett., vol. 22, no. 8, pp. 390-392, Aug. 2001. (Pubitemid 32720347)
3. K. Ueda, M. Kasu, Y. Yamauchi, T. Makimoto, M. Schwitters, D. J. Twitchen, G. A. Scarsbrook, and S. E. Coe, "Diamond FET using high-quality polycrystalline diamond with fT of 45 GHz and fmax of 120 GHz," IEEE Electron Device Lett., vol. 27, no. 7, pp. 570-572, Jul. 2006. (Pubitemid 43965293)
4. A. Aleksov, A. Denisenko, U. Spitzberg, T. Jenkins, W. Ebert, and E. Kohn, "RF performance of surface channel diamond FETs with submicron gate length," Diamond Relat. Mater., vol. 11, no. 3-6, pp. 382-386, Mar.-Jun. 2002. (Pubitemid 34703733)
5. K. Hirama, H. Takayanagi, S. Yamauchi, Y. Jingu, H. Umezawa, and H. Kawarada, "High-performance p-channel diamond MOSFETs with alumina gate insulator," in IEDM Tech. Dig., 2007, pp. 873-876.
6. M. Kasu, K. Ueda, H. Kageshima, and Y. Yamauchi, "Gate interfacial layer in hydrogen-terminated diamond field-effect transistors," Diamond Relat. Mater., vol. 17, no. 4/5, pp. 741-744, Apr./May 2008. (Pubitemid 351608817)
7. M. Kasu, K. Ueda, H. Ye, Y. Yamauchi, S. Sasaki, and T. Makimoto, "2 W/mm output power density at 1 GHz for diamond FETs," Electron. Lett., vol. 41, no. 22, pp. 1249-1250, Oct. 2005.
8. T. Okayama, S. D. Arthur, J. L. Garrett, andM. V. Rao, "Bias-stress induced threshold voltage and drain current instability in 4H-SiC DMOSFETs," Solid State Electron., vol. 52, no. 1, pp. 164-170, Jan. 2008. (Pubitemid 350138067)
9. H. Matsudaira, S. Miyamoto, H. Ishizaka, H. Umezawa, and H. Kawarada, "Over 20 GHz cut-off frequency deep sub-micron gate diamond MISFET," IEEE Electron Device Lett., vol. 25, no. 7, pp. 480-482, Jul. 2004.