Understanding the impact of the doping profiles on selective emitter solar cell by two-dimensional numerical simulation

IEEE Journal of Photovoltaics

Volumn 3, Issue 1, 2013, Pages 159-167

  De Rose, Raffaele ^a,b   Zanuccoli, Mauro ^a   Magnone, Paolo ^a   Frei, M ^c   Sangiorgi, Enrico ^a   Fiegna, Claudio ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

^b UNIVERSITY OF CALABRIA   (Italy)

^c APPLIED MATERIALS INC   (United States)

Author keywords

Doping profile; numerical simulation; selective emitter (SE); solar cell

Indexed keywords

ALIGNMENT TOLERANCE; DECOUPLED ANALYSIS; DIFFUSION PROCESS; DOPING PROFILES; EFFICIENCY IMPROVEMENT; ELECTRO-OPTICAL; METALLIZATION PROCESS; MONOCRYSTALLINE; NUMERICAL DEVICE SIMULATION; NUMERICAL RESULTS; OPTIMIZED DESIGNS; PHOSPHORUS-DOPED; SE PROCESS; SELECTIVE EMITTERS; SIMULATION STUDIES; TWO-DIMENSIONAL NUMERICAL SIMULATION;

METALLIZING; OPTIMIZATION; PHOSPHORUS; SILICON SOLAR CELLS; SOLAR CELLS;

COMPUTER SIMULATION;

EID: 84871736423     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2012.2214376     Document Type: Article

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