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Volumn , Issue , 2011, Pages 002177-002180

Understanding the impact of double screen-printing on silicon solar cells by 2-D numerical simulations

Author keywords

[No Author keywords available]

Indexed keywords

2-D NUMERICAL SIMULATION; C-SI SOLAR CELL; EFFICIENCY IMPROVEMENT; ELECTRICAL PARAMETER; ENHANCED EFFICIENCY; EXPERIMENTAL DATA; FILL FACTOR;

EID: 84861050107     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2011.6186388     Document Type: Conference Paper
Times cited : (19)

References (8)
  • 4
    • 77957015108 scopus 로고    scopus 로고
    • 20% Efficient Screen-Printed Cells with Spin- On-Dielectric-Passivated Boron Back-Surface Field
    • A. Das, V. Meemongkolkiat, D. S. Kim, S. Ramanathan, A. Rohatgi, "20% Efficient Screen-Printed Cells With Spin- On-Dielectric-Passivated Boron Back-Surface Field", IEEE Trans. Electron Devices, 57, 2010, pp. 2462-2469.
    • (2010) IEEE Trans. Electron Devices , vol.57 , pp. 2462-2469
    • Das, A.1    Meemongkolkiat, V.2    Kim, D.S.3    Ramanathan, S.4    Rohatgi, A.5
  • 5
    • 0013226142 scopus 로고    scopus 로고
    • Finite-temperature full random-phase approximation model of band gap narrowing for silicon device simulation
    • A. Schenk., "Finite-temperature full random-phase approximation model of band gap narrowing for silicon device simulation", J. Appl. Phys., 84, 1998, pp. 3684- 3695.
    • (1998) J. Appl. Phys. , vol.84 , pp. 3684-3695
    • Schenk, A.1
  • 6
    • 0040028982 scopus 로고    scopus 로고
    • Minority carrier lifetime degradation in boron-doped Czochralski silicon
    • S. W. Glunz, S. Rein, J. Y. Lee, W. Warta, "Minority carrier lifetime degradation in boron-doped Czochralski silicon", J. Appl. Phys., 90, 2001, pp. 2397-2404.
    • (2001) J. Appl. Phys. , vol.90 , pp. 2397-2404
    • Glunz, S.W.1    Rein, S.2    Lee, J.Y.3    Warta, W.4
  • 7


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.