High-performance printed carbon nanotube thin-film transistors array fabricated by a nonlithography technique using hafnium oxide passivation layer and mask

ACS Applied Materials and Interfaces

Volumn 4, Issue 12, 2012, Pages 7047-7054

  Raman Pillai, Suresh Kumar ^a   Chan Park, Mary B ^a  

^a Nanyang Technological University   (Singapore)

Author keywords

carbon nanotube; electrical characteristics; hafnium oxide; passivation; shadow mask patterning; thin film transistor

Indexed keywords

ACTIVE CHANNELS; AMBIENT CONDITIONS; ASSEMBLY TECHNIQUES; DEVICE CHANNEL; DEVICE ISOLATION; DEVICE PERFORMANCE; ELECTRICAL CHARACTERISTIC; EXTERNAL ENVIRONMENTS; FABRICATED DEVICE; LARGE-SCALE APPLICATIONS; LARGE-SCALE FABRICATION; METAL ELECTRODES; NANOTUBE DEPOSITION; ON/OFF RATIO; OXIDE PASSIVATION LAYER; OXYGEN PLASMA ETCHING; PARALLEL METHOD; PASSIVATING LAYER; PATTERNING METHODS; PATTERNING PROCESS; PRINTED ELECTRONICS; PROTECTED AREAS; SHADOW MASK; SHADOW MASKING; WAFER SUBSTRATES;

AUTOMOBILE MANUFACTURE; CARBON NANOTUBES; CONSERVATION; FABRICATION; FIELD EFFECT TRANSISTORS; NANOTUBES; OXIDES; PASSIVATION; PHOTOLITHOGRAPHY; PLASMA ETCHING; SILICON; SILICON WAFERS; SINGLE-WALLED CARBON NANOTUBES (SWCN); THIN FILM TRANSISTORS;

HAFNIUM OXIDES;

CARBON NANOTUBE; HAFNIUM; HAFNIUM OXIDE; OXIDE;

ARTICLE; ATOMIC FORCE MICROSCOPY; CHEMISTRY;

HAFNIUM; MICROSCOPY, ATOMIC FORCE; NANOTUBES, CARBON; OXIDES;

EID: 84871667411     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am302431e     Document Type: Article

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