Wafer-scale fabrication and characterization of thin-film transistors with polythiophene-sorted semiconducting carbon nanotube networks

ACS Nano

Volumn 6, Issue 1, 2012, Pages 451-458

  Liyanage, Luckshitha Suriyasena ^a   Lee, Hangwoo ^a   Patil, Nishant ^a   Park, Steve ^a   Mitra, Subhasish ^a   Bao, Zhenan ^a   Wong, Hon Sum Philip ^a  

^a Stanford University   (United States)

Author keywords

carbon nanotube network; hybrid nanostructure; stick percolation; thin film transistor

Indexed keywords

ATOMIC FORCE MICROSCOPE IMAGES; AVERAGE MOBILITY; CARBON NANOTUBE NETWORK; CHANNEL LENGTH; CHANNEL MATERIALS; DEVICE PROPERTIES; DISPERSION TECHNIQUE; ELECTRICAL MEASUREMENT; HIGH QUALITY; HYBRID NANOSTRUCTURES; OPTIMAL DEVICES; POLY(3-DODECYLTHIOPHENE); REGIO-REGULAR; SEMICONDUCTING CARBON NANOTUBES; SHORT CHANNELS; STATISTICAL STUDY; TRANSPARENT DISPLAYS; WAFER SCALE FABRICATION;

ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; CARBON; ELECTRIC PROPERTIES; FLEXIBLE DISPLAYS; LITHOGRAPHY; NANOSTRUCTURES; RAMAN SPECTROSCOPY; SCALABILITY; SEMICONDUCTING ORGANIC COMPOUNDS; SOLVENTS; THIN FILM TRANSISTORS;

SINGLE-WALLED CARBON NANOTUBES (SWCN);

CARBON NANOTUBE; POLYMER; POLYTHIOPHENE; THIOPHENE DERIVATIVE;

ARTICLE; ARTIFICIAL MEMBRANE; CHEMISTRY; EQUIPMENT; EQUIPMENT DESIGN; PARTICLE SIZE; SEMICONDUCTOR; ULTRASTRUCTURE;

EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MEMBRANES, ARTIFICIAL; NANOTUBES, CARBON; PARTICLE SIZE; POLYMERS; SEMICONDUCTORS; THIOPHENES; TRANSISTORS, ELECTRONIC;

EID: 84856159065     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn203771u     Document Type: Article

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