Realization of nanoscaled tubular conductors by means of GaAs/InAs core/shell nanowires

Nanotechnology

Volumn 24, Issue 3, 2013, Pages

  Blomers C ^a,b   Rieger, T ^a,b   Zellekens, P ^a,b   Haas, F ^a,b   Lepsa, M I ^a,b   Hardtdegen, H ^a,b   Gul O ^a,b   Demarina, N ^a,b   Grutzmacher D ^a,b   Luth H ^a,b   Schäpers, Th ^a,b,c  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b Jülich Aachen Research Alliance Section Fundamentals of Future Information Technology JARA FIT   (Germany)

^c RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANGULAR MOMENTUM STATE; BAND ALIGNMENTS; CONDUCTANCE OSCILLATIONS; CORE/SHELL; GAAS; INAS; LOW TEMPERATURES; MAGNETOCONDUCTANCE; NANOSCALED; ONE-DIMENSIONAL CHANNELS; SHELL THICKNESS;

INDIUM ARSENIDE; MOLECULAR BEAM EPITAXY; NANOWIRES; TRANSPORT PROPERTIES;

SHELLS (STRUCTURES);

EID: 84871548281     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/24/3/035203     Document Type: Article

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