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Volumn 100, Issue 4, 2012, Pages

Preparation of Ohmic contacts to GaAs/AlGaAs-core/shell-nanowires

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; CORE/SHELL; CYLINDRICAL GEOMETRY; GAAS; GAAS/ALGAAS; OHMIC CHARACTERISTICS; OPTIMIZED CONDITIONS;

EID: 84856499405     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3678639     Document Type: Article
Times cited : (17)

References (18)
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  • 3
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  • 4
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    • InAs/InP radial nanowire heterostructures as high electron mobility devices
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    • X. Jiang, Q. Xiong, S. Nam, F. Qian, Y. Li, and C. M. Lieber, Nano Lett. 7, 3214 (2007). 10.1021/nl072024a (Pubitemid 350132956)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.