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Volumn 6, Issue 1, 2013, Pages

InGaN channel high-electron-mobility transistors with InAlGaN barrier and fT/fmax of 260/220 GHz

(15) Wang, Ronghua a Li, Guowang a Karbasian, Golnaz a Guo, Jia a Faria, Faiza a Hu, Zongyang a Yue, Yuanzheng a Verma, Jai a Laboutin, Oleg b Cao, Yu b Johnson, Wayne b Snider, Gregory a Fay, Patrick a Jena, Debdeep a Xing, Huili a

a University of Notre Dame (United States)

b KOPIN CORPORATION (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL ELECTRONS; DC TRANSCONDUCTANCE; HIGH ELECTRON MOBILITY TRANSISTOR (HEMT); INALGAN; MAXIMUM OUTPUT; N-CHANNEL; SIC SUBSTRATES; STRUCTURE FEATURES; T-SHAPED GATE;

GALLIUM; GALLIUM ALLOYS; GALLIUM COMPOUNDS; SILICON CARBIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84871538321 PISSN: 18820778 EISSN: 18820786 Source Type: Journal
DOI: 10.7567/APEX.6.016503 Document Type: Article

Times cited : (45)

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