SCOPUS 정보 검색 플랫폼

Applied Physics Letters

Volumn 100, Issue 12, 2012, Pages

InGaN channel high electron mobility transistor structures grown by metal organic chemical vapor deposition

(7) Laboutin, O a Cao, Y a Johnson, W a Wang, R b Li, G b Jena, D b Xing, H b

a KOPIN CORPORATION (United States)

b University of Notre Dame (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALINGAN; CHANNEL LAYERS; COMPOSITION RANGES; HIGH ELECTRON MOBILITY TRANSISTOR (HEMT); HIGH GROWTH TEMPERATURES; LOW GROWTH RATE; N-CHANNEL; PHOTOLUMINESCENCE INTENSITIES; SHEET CHARGE DENSITY;

ELECTRON MOBILITY; ELECTRON TRANSPORT PROPERTIES; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SURFACE ROUGHNESS; VAPORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84859540903 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3697415 Document Type: Article

Times cited : (41)

References (16)

1
- 35148856624
- Short-channel effect limitations on high-frequency operation of AlGaN/ GaN HEMTs for T-gate devices
- DOI 10.1109/TED.2007.904476
- G. H. Jessen, R. C. Fitch, J. K. Gillespie, G. Via, A. Crespo, D. Langley, D. J. Denninghoff, M. Trejo, and E. R. Heller, IEEE Trans. Electron Devices 54, 2589 (2007). 10.1109/TED.2007.904476 (Pubitemid 47541871)
- (2007) IEEE Transactions on Electron Devices , vol.54 , Issue.10 , pp. 2589-2597
- Jessen, G.H.¹ Fitch Jr., R.C.² Gillespie, J.K.³ Via, G.⁴ Crespo, A.⁵ Langley, D.⁶ Denninghoff, D.J.⁷ Trejo Jr., M.⁸ Heller, E.R.⁹

2
- 78449235159
- 10.1002/pssc.200983899
- H. Wang, J. W. Chung, X. Gao, S. Guo, and T. Palacios, Phys. Status Solidi C 7, 2440 (2010). 10.1002/pssc.200983899
- (2010) Phys. Status Solidi C , vol.7 , pp. 2440
- Wang, H.¹ Chung, J.W.² Gao, X.³ Guo, S.⁴ Palacios, T.⁵

3
- 80054997749
- 10.1109/LED.2011.2164613
- D. S. Lee, X. Gao, S. Guo, D. Kopp, P. Fey, and T. Palacios, IEEE Electron Device Lett. 32, 1525 (2011). 10.1109/LED.2011.2164613
- (2011) IEEE Electron Device Lett. , vol.32 , pp. 1525
- Lee, D.S.¹ Gao, X.² Guo, S.³ Kopp, D.⁴ Fey, P.⁵ Palacios, T.⁶

4
- 80052035555
- 10.1109/LED.2011.2158288
- R. Wang, G. Li, J. Verma, B. Sensale-Rodriguez, T. Fang, J. Guo, Z. Hu, O. Laboutin, Y. Cao, W. Johnson, G. Snider, P. Fay, D. Jena, and H. Xing, IEEE Electron Device Lett. 32, 1215 (2011). 10.1109/LED.2011.2158288
- (2011) IEEE Electron Device Lett. , vol.32 , pp. 1215
- Wang, R.¹ Li, G.² Verma, J.³ Sensale-Rodriguez, B.⁴ Fang, T.⁵ Guo, J.⁶ Hu, Z.⁷ Laboutin, O.⁸ Cao, Y.⁹ Johnson, W.¹⁰ Snider, G.¹¹ Fay, P.¹² Jena, D.¹³ Xing, H.¹⁴

5
- 78650397507
- 10.1063/1.3525713
- J. Song, F. J. Xu, X. D. Yan, F. Lin, C. C. Huang, L. P. You, T. J. Yu, X. Q. Wang, B. Shen, K. Wei, and X. Y. Liu, Appl. Phys. Lett. 97, 232106 (2010). 10.1063/1.3525713
- (2010) Appl. Phys. Lett. , vol.97 , pp. 232106
- Song, J.¹ Xu, F.J.² Yan, X.D.³ Lin, F.⁴ Huang, C.C.⁵ You, L.P.⁶ Yu, T.J.⁷ Wang, X.Q.⁸ Shen, B.⁹ Wei, K.¹⁰ Liu, X.Y.¹¹

6
- 79955534584
- 10.1109/LED.2011.2111352
- D. S. Lee, X. Gao, S. Guo, and T. Palacios, IEEE Electron Device Lett. 32, 617 (2011). 10.1109/LED.2011.2111352
- (2011) IEEE Electron Device Lett. , vol.32 , pp. 617
- Lee, D.S.¹ Gao, X.² Guo, S.³ Palacios, T.⁴

7
- 33645471816
- 10.1109/LED.2005.861027
- J. Liu, Y. Zhu, K. M. Lau, and K. J. Chen, IEEE Electron Device Lett. 27, 10 (2006). 10.1109/LED.2005.861027
- (2006) IEEE Electron Device Lett. , vol.27 , pp. 10
- Liu, J.¹ Zhu, Y.² Lau, K.M.³ Chen, K.J.⁴

8
- 0035517506
- 10.1143/JJAP.40.L1142
- G. Simin, X. Hu, A. Tarakji, J. Zhang, A. Koudymov, S. Saygi, J. Yang, A. Khan, M. S. Shur, and R. Gaska, Jpn. Appl. Phys. 40, L1142 (2001). 10.1143/JJAP.40.L1142
- (2001) Jpn. Appl. Phys. , vol.40 , pp. 1142
- Simin, G.¹ Hu, X.² Tarakji, A.³ Zhang, J.⁴ Koudymov, A.⁵ Saygi, S.⁶ Yang, J.⁷ Khan, A.⁸ Shur, M.S.⁹ Gaska, R.¹⁰

9
- 0036686468
- 2/AlGaN/InGaN/GaN MOSDHFETs
- DOI 10.1109/LED.2002.801316, PII 1011092002801316
- G. Simin, A. Koudymov, H. Fatima, J. Zhang, J. Yang, A. Khan, X. Hu, A. Tarakji, R. Gaska, and S. Shur, IEEE Electron Device Lett. 23, 458 (2002). 10.1109/LED.2002.801316 (Pubitemid 34950020)
- (2002) IEEE Electron Device Letters , vol.23 , Issue.8 , pp. 458-460
- Simin, G.¹ Koudymov, A.² Fatima, H.³ Zhang, J.⁴ Yang, J.⁵ Khan, M.A.⁶ Hu, X.⁷ Tarakji, A.⁸ Gaska, R.⁹ Shur, M.S.¹⁰

10
- 79960088595
- 10.1002/pssa.201001153
- H. Ikki, Y. Isobe, D. Iida, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, H. Amano, A. Bandoh, and T. Udagawa, Phys. Status Solidi A 208, 1614 (2011). 10.1002/pssa.201001153
- (2011) Phys. Status Solidi A , vol.208 , pp. 1614
- Ikki, H.¹ Isobe, Y.² Iida, D.³ Iwaya, M.⁴ Takeuchi, T.⁵ Kamiyama, S.⁶ Akasaki, I.⁷ Amano, H.⁸ Bandoh, A.⁹ Udagawa, T.¹⁰

11
- 9944240708
- 10.1016/j.jcrysgro.2004.08.071
- N. Okamoto, K. Hoshino, N. Hara, M. Takikawa, and Y. Arakawa, J. Cryst. Growth 272, 278 (2004). 10.1016/j.jcrysgro.2004.08.071
- (2004) J. Cryst. Growth , vol.272 , pp. 278
- Okamoto, N.¹ Hoshino, K.² Hara, N.³ Takikawa, M.⁴ Arakawa, Y.⁵

12
- 37549039044
- 10.1063/1.2824461
- J. Xie, J. H. Leach, X. Ni, M. Wu, R. Shimada, U. Ozgur, and H. Morkoc, Appl. Phys. Lett. 91, 262102 (2007). 10.1063/1.2824461
- (2007) Appl. Phys. Lett. , vol.91 , pp. 262102
- Xie, J.¹ Leach, J.H.² Ni, X.³ Wu, M.⁴ Shimada, R.⁵ Ozgur, U.⁶ Morkoc, H.⁷

13
- 34247846340
- High-mobility window for two-dimensional electron gases at ultrathin AlNGaN heterojunctions
- DOI 10.1063/1.2736207
- Y. Cao and D. Jena, Appl. Phys. Lett. 90, 182112 (2007) 10.1063/1.2736207 (Pubitemid 46701175)
- (2007) Applied Physics Letters , vol.90 , Issue.18 , pp. 182112
- Cao, Y.¹ Jena, D.²

14
- 84863115969
- edited by K. Shenai, M. Dudley, R. Garg, A. Khan, and R. Ma. 10.1149/1.3631507
- O. Laboutin, Y. Cao, R. Wang, G. Li, D. Jena, H. Xing, C.-F. Lo, L. Liu, S. J. Pearton, F. Ren, and W. Johnson, ECS Trans. 41 (8), 301 (2011), edited by, K. Shenai, M. Dudley, R. Garg, A. Khan, and, R. Ma, 10.1149/1.3631507
- (2011) ECS Trans. , vol.41 , Issue.8 , pp. 301
- Laboutin, O.¹ Cao, Y.² Wang, R.³ Li, G.⁴ Jena, D.⁵ Xing, H.⁶ Lo, C.-F.⁷ Liu, L.⁸ Pearton, S.J.⁹ Ren, F.¹⁰ Johnson, W.¹¹

15
- 0344975184
- 10.1063/1.118455
- Y. Narukawa, Y. Kawakami, M. Funato, S. Fujita, S. Fujita, and S. Nakamura, Appl. Phys. Lett. 70, 981 (1997). 10.1063/1.118455
- (1997) Appl. Phys. Lett. , vol.70 , pp. 981
- Narukawa, Y.¹ Kawakami, Y.² Funato, M.³ Fujita, S.⁴ Fujita, S.⁵ Nakamura, S.⁶

16
- 79956040432
- 10.1063/1.1496145
- J. Narayan, H. Wang, J. Ye, S.-J. Hon, K. Fox, J. C. Chen, H. K. Choi, and J. C. C. Fan, Appl. Phys. Lett. 81, 841 (2002). 10.1063/1.1496145
- (2002) Appl. Phys. Lett. , vol.81 , pp. 841
- Narayan, J.¹ Wang, H.² Ye, J.³ Hon, S.-J.⁴ Fox, K.⁵ Chen, J.C.⁶ Choi, H.K.⁷ Fan, J.C.C.⁸

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.