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Applied Physics Letters

Volumn 101, Issue 24, 2012, Pages

Growth-rate-dependent laterally graded SiGe profiles on insulator by cooling-rate controlled rapid-melting-growth

(6) Matsumura, Ryo a Tojo, Yuki a Kurosawa, Masashi a,b,d Sadoh, Taizoh a Mizushima, Ichiro c Miyao, Masanobu a

a KYUSHU UNIVERSITY (Japan)

b JAPAN SOCIETY FOR THE PROMOTION OF SCIENCE (Japan)

c TOSHIBA CORPORATION (Japan)

d NAGOYA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COOLING RATES; DYNAMICAL ANALYSIS; SEGREGATION KINETICS; SI-TECHNOLOGY; SIGE ON INSULATOR;

COOLING; LATTICE CONSTANTS;

SILICON ALLOYS;

EID: 84871292047 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4769998 Document Type: Article

Times cited : (30)

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