Fabrication of local ge-on-insulator structures by lateral liquid-phase epitaxy: Effect of controlling interface energy between ge and insulators on lateral epitaxial growth

Applied Physics Express

Volumn 2, Issue 6, 2009, Pages

  Hashimoto, Tatsuya ^a   Yoshimoto, Chiaki ^a   Hosoi, Takuji ^a   Shimura , Takayoshi ^a   Watanabe, Heiji ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTROLLING INTERFACES; GE ON INSULATORS; HIGH-K DIELECTRIC; IMPROVED MECHANISM; INSULATOR MATERIALS; INTERFACE ENERGY; LATERAL EPITAXIAL GROWTHS; MICRO-CRUCIBLES; RANDOM NUCLEATION;

AGGLOMERATION; CRYSTAL GROWTH; FABRICATION; GERMANIUM; LIQUIDS; NUCLEATION; PHASE INTERFACES; SILICON COMPOUNDS;

EPITAXIAL GROWTH;

EID: 67949089744     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.2.066502     Document Type: Article

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