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Electrochemical and Solid-State Letters

Volumn 13, Issue 8, 2010, Pages

High quality single-crystal laterally graded SiGe on insulator by rapid melt growth

(4) Koh, H Y Serene a Chen, Shu Lu a Griffin, Peter B a Plummer, James D a

a Stanford University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; HIGH QUALITY; LATERAL VARIATIONS; MELT GROWTH; MICRO-CRUCIBLES; MISCIBILITY GAP; RAPID MELT GROWTH; SELF-ALIGNED; SIGE ON INSULATOR; SILICON DIOXIDE;

SEMICONDUCTOR INSULATOR BOUNDARIES; SILICA;

SILICON ALLOYS;

EID: 77953591216 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3436665 Document Type: Article

Times cited : (10)

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