From porous to dense thin ZnO films through reactive DC sputter deposition onto Si (100) substrates

Physica Status Solidi (A) Applications and Materials Science

Volumn 209, Issue 12, 2012, Pages 2463-2469

  Borysiewicz, Michał A ^a   Dynowska, Elzbieta ^a,b   Kolkovsky, Valery ^b   Dyczewski, Jan ^b   Wielgus, MacIej ^a   Kamińska, Eliana ^a   Piotrowska, Anna ^a  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^b INSTITUTE OF PHYSICS   (Poland)

Author keywords

silicon; sputter deposition; thin films; ZnO

Indexed keywords

ARGON-OXYGEN MIXTURES; DC REACTIVE SPUTTER; ELEVATED TEMPERATURE; HALL EFFECT MEASUREMENT; OXYGEN CONTENT; OXYGEN FLOW; POLYCRYSTALLINE; POLYCRYSTALLINE ZNO; POSTGROWTH ANNEALING; SI (100) SUBSTRATE; THIN-FILM STRUCTURE; TOTAL GAS PRESSURE; ZNO; ZNO FILMS;

ARGON; ELECTRIC PROPERTIES; METALLIC FILMS; SCANNING ELECTRON MICROSCOPY; SILICON; SPUTTER DEPOSITION; THIN FILMS; X RAY DIFFRACTION; ZINC; ZINC OXIDE;

OXYGEN;

EID: 84871221522     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201228041     Document Type: Article

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