ZnO thin films of high crystalline quality deposited on sapphire and GaN substrates by high temperature sputtering

Materials Research Society Symposium Proceedings

Volumn 1315, Issue , 2012, Pages 113-118

  Borysiewicz, Michał A ^a   Pasternak, Iwona ^a   Dynowska, Elzbieta ^a,b   Jakieła, Rafał ^b   Wzorek, Marek ^a   Kolkovski, Valery ^b   Duzyńska, Anna ^b   Kamińska, Eliana ^a   Piotrowska, Anna ^a  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^b INSTITUTE OF PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPES; CROSS SECTIONAL IMAGE; DEPTH PROFILE; EX SITU; GAN LAYERS; GAN SUBSTRATE; HALL EFFECT MEASUREMENT; HIGH TEMPERATURE; HIGH VACUUM; HIGH-CRYSTALLINE QUALITY; LOW TEMPERATURES; MGO BUFFER LAYER; NUCLEATION LAYERS; PHOTOLUMINESCENCE SPECTRUM; REACTIVE MAGNETRON SPUTTERING; SCANNING AND TRANSMISSION ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROSCOPY; SINGLE ORIENTATIONS; ZNO; ZNO FILMS; ZNO THIN FILM;

ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; BUFFER LAYERS; CONDUCTIVE FILMS; CRYSTALLINE MATERIALS; ELECTRIC PROPERTIES; GALLIUM NITRIDE; HALL EFFECT; HIGH TEMPERATURE APPLICATIONS; METALLIC FILMS; PHOTOLUMINESCENCE; SAPPHIRE; SECONDARY ION MASS SPECTROMETRY; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; VACUUM APPLICATIONS; ZINC OXIDE;

EPITAXIAL FILMS;

EID: 84455162662     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/opl.2011.717     Document Type: Conference Paper

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