Impact of moisture and fluorocarbon passivation on the current collapse of AlGaN/GaN HEMTs

IEEE Electron Device Letters

Volumn 33, Issue 10, 2012, Pages 1378-1380

  Gao, Feng ^a   Chen, Di ^b   Lu, Bin ^a   Tuller, Harry L ^b   Thompson, Carl V ^b   Keller, Stacia ^c   Mishra, Umesh K ^c   Palacios, Tomás ^a  

^a Department of Electrical Engineering and Computer Science   (United States)

^b Massachusetts Institute of Technology Cambridge   (United States)

^c University of California   (United States)

Author keywords

AlGaN GaN high electron mobility transistors (HEMTs); current collapse; moisture; passivation

Indexed keywords

ALGAN/GAN HEMTS; ALGAN/GAN HIGH ELECTRON-MOBILITY TRANSISTORS; AMBIENT MOISTURE; CURRENT COLLAPSE; DEIONIZATION; DEVICE SURFACES; DRY AIR; PARASITIC CAPACITANCE; PASSIVATION LAYER; PULSED MEASUREMENTS; SEMI-CONDUCTOR SURFACES; WATER MOLECULE;

ELECTRIC CURRENT MEASUREMENT; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; HYDROPHOBICITY; MOISTURE; VAPORS;

PASSIVATION;

EID: 84866937719     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2206556     Document Type: Article

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