A visualization of threading dislocations formation and dynamics in mosaic growth of GaN-based light emitting diode epitaxial layers on (0001) sapphire

Applied Physics Letters

Volumn 101, Issue 23, 2012, Pages

  Ravadgar, P ^a   Horng, R H ^a,b   Ou, S L ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL ETCHANTS; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; ETCH PITS; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; GROWTH STAGES; SAPPHIRE SUBSTRATES; THEORETICAL MODELS; THREADING DISLOCATION;

DYNAMICS; EPITAXIAL GROWTH; FIELD EMISSION MICROSCOPES; GALLIUM NITRIDE; LIGHT EMITTING DIODES; SAPPHIRE; TRANSMISSION ELECTRON MICROSCOPY; VISUALIZATION;

GALLIUM ALLOYS;

EID: 84870908955     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4769905     Document Type: Article

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