Optical and magnetic resonance studies of Mg-doped GaN homoepitaxial layers grown by molecular beam epitaxy

Physica B: Condensed Matter

Volumn 401-402, Issue , 2007, Pages 327-330

  Glaser, E R ^a   Murthy, M ^b   Freitas Jr , J A ^a   Storm, D F ^a   Zhou, L ^c   Smith, D J ^c  

^a NAVAL RESEARCH LABORATORY   (United States)

^b GEORGE MASON UNIVERSITY   (United States)

^c ARIZONA STATE UNIVERSITY   (United States)

Author keywords

Doping; III Nitrides and compounds; Magnetic resonance; Photoluminescence

Indexed keywords

ANNEALING; DOPING (ADDITIVES); EXCITONS; MAGNETIC RESONANCE; MOLECULAR BEAM EPITAXY; PHONONS;

HIGH RESOLUTION; HOMOEPITAXIAL LAYERS; MOLECLAR BEAM EPITAXY;

GALLIUM NITRIDE;

EID: 36048976655     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2007.08.179     Document Type: Article

References (14)

1. Reshchikov M.A., and Morkoc H. J. Appl. Phys. 97 (2005) 061301
2. Glaser E.R., et al. Phys. Rev. B B65 (2002) 085312 and references therein
3. Aliev G.N., et al. Phys. Rev. B71 (2005) 195204
4. Malyshev A.V., et al. Phys. Solid State 40 (1998) 917
5. Vaudo R.P., et al. Phys. Stat. Sol. (a) 200 (2003) 18
6. The SIMS measurements were performed by Charles Evans and Associates (West), Inc.
7. Storm D.F., et al. Appl. Phys. Lett. 81 (2002) 3819
8. Storm D.F., et al. J. Cryst. Growth 301/302 (2007) 429
9. Freitas Jr. J.A., et al. Phys. Rev. B 66 (2002) 233311
10. Stepniewski R., et al. Phys. Stat. Sol. (b) 210 (1998) 373
11. Dingle R., and Ilegems M. Solid State Commun. 9 (1971) 175
12. Glaser E.R., et al. Physica B 273/274 (1999) 58
13. Glaser E.R., et al. Phys. Rev. B 68 (2003) 195201
14. Murthy M., et al. J. Cryst. Growth 305 (2007) 393 and references therein