Investigation of cracks in gan films grown by combined hydride and metal organic vaporphase epitaxial method

Nanoscale Research Letters

Volumn 6, Issue 1, 2011, Pages

  Liu, Jianming ^a   Liu, Xianlin ^a   Li, Chengming ^a   Wei, Hongyuan ^a   Guo, Yan ^a   Jiao, Chunmei ^a   Li, Zhiwei ^a   Xu, Xiaoqing ^a   Song, Huaping ^a   Yang, Shaoyan ^a   Zhu, Qinsen ^a   Wang, Zhanguo ^a   Yang, Anli ^a   Yang, Tieying ^b   Wang, Huanhua ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b INSTITUTE OF HIGH ENERGY PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE STRESS; ETCHING; GALLIUM NITRIDE; HYDRIDES; III-V SEMICONDUCTORS; METALLORGANIC VAPOR PHASE EPITAXY; ORGANOMETALLICS; RAMAN SCATTERING; SCANNING ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS; CRACKS; EPITAXIAL FILMS; EPITAXIAL GROWTH; INTERFACES (MATERIALS); X RAY DIFFRACTION;

CRYSTAL QUALITIES; EPITAXIAL METHOD; GAN EPITAXIAL LAYERS; HIGH RESOLUTION; HIGH RESOLUTION X RAY DIFFRACTION; HYDRIDE VAPOR PHASE EPITAXY; LATERAL GROWTH RATES; MICRO-RAMAN SPECTRA; CRITICAL VALUE; CROSS SECTION; GAN FILM; LATERAL GROWTH; METAL ORGANIC; TOP SURFACE; VAPOR PHASE;

GROWTH RATE; METALLORGANIC VAPOR PHASE EPITAXY;

EID: 84255214223     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-6-69     Document Type: Article

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