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Journal of the Electrochemical Society

Volumn 157, Issue 1, 2010, Pages

Formation of hexagonal pyramids and pits on V-/VI-polar and III-/II-polar GaN/ZnO surfaces by wet etching

(7) Han, Seung Cheol a Kim, Jae Kwan a Kim, Jun Young a Kim, Kyoung Kook b Tampo, H c Niki, S c Lee, Ji Myon a

a Sunchon National University (South Korea)

b Korea Polytechnic University (South Korea)

c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACIDIC SOLUTIONS; ETCH PITS; ETCH RATES; ETCHING CHARACTERISTICS; EVOLUTIONARY STAGE; GAN THIN FILMS; HEXAGONAL PYRAMIDS; POLAR SURFACES; THREADING DISLOCATION; WET-CHEMICAL ETCHING; ZNO;

ALKALINITY; GALLIUM ALLOYS; GALLIUM NITRIDE; MORPHOLOGY; PHOTORESISTS; SEMICONDUCTING GALLIUM; SEMICONDUCTING ZINC COMPOUNDS; SURFACE DEFECTS; SURFACE MORPHOLOGY; ZINC; ZINC OXIDE;

WET ETCHING;

EID: 72249097518 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3253564 Document Type: Article

Times cited : (51)

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