Novel growth mechanism of epitaxial graphene on metals

Nano Letters

Volumn 11, Issue 5, 2011, Pages 2092-2095

  Zangwill, Andrew ^a   Vvedensky, Dimitri D ^b  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

epitaxy; Graphene; growth; nucleation; rate equations

Indexed keywords

ASSEMBLY KINETICS; CARBON AD-ATOMS; CARBON ATOMS; DEVELOPING STRATEGY; EPITAXIAL GRAPHENE; EPITAXY; GRAPHENE GROWTH; GRAPHENE LAYERS; GROWTH; GROWTH MECHANISMS; HEXAGONAL SHEETS; HIGH-RESOLUTION IMAGING; LARGE-SCALE PRODUCTION; LOW ENERGIES; METAL SURFACES; MICRO-MECHANICAL; NANOELECTRONIC APPLICATIONS; PREPARATION METHOD; RATE EQUATIONS; RATE THEORY; SCALE-UP; STABLE PRECURSORS; TEMPERATURE DEPENDENCE; TIME-DEPENDENT;

ATOMS; EPITAXIAL GROWTH; EXPERIMENTS; NUCLEATION;

GRAPHENE;

EID: 79955898057     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl2006005     Document Type: Article

References (24)

1. Gall, N. R.; Rut'kov, E. V.; Tontegode, A. Y. Int. J. Mod. Phys. B 1997, 11, 1865-1911
2. Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Zhang, Y.; Dubonos, S. V.; Grigorieva, I. V.; Firsov, A. A. Science 2004, 306, 666-669
3. Berger, C.; Song, Z.; Li, T.; Li, X.; Ogbazghi, A. Y.; Feng, R.; Dai, Z.; Marchenkov, A. N.; Conrad, E. H.; First, P. N.; de Heer, W. A. J. Phys. Chem. B 2004, 108, 19912-19916
4. Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Katsnelson, M. I.; Grigorieva, I. V.; Dubonos, S. V.; Firsov, A. A. Nature 2005, 438, 197-200
5. Bostwick, A.; Ohta, T.; Seyller, T.; Horn, K.; Rotenberg, E. Nat. Phys. 2007, 3, 36-40
6. First, P.; de Heer, W.; Seyller, T.; Berger, C.; Stroscio, J.; Moon, J.-S. MRS Bull. 2010, 35, 296-305
7. Sprinkle, M.; Ruan, M.; Hu, Y.; Hankinson, J.; Rubio-Roy, M.; Zhang, B.; Wu, X.; Berger, C.; de Heer, W. A. Nat. Nanotechnol. 2010, 5, 727-731
8. Wintterlin, J.; Bocquet, M.-L. Surf. Sci. 2009, 603, 1841-1852
9. Loginova, E.; Bartelt, N. C.; Feibelman, P. J.; McCarty, K. F. New J. Phys. 2008, 10, 093026
10. Loginova, E.; Bartelt, N. C.; Feibelman, P. J.; McCarty, K. F. New J. Phys. 2009, 11, 063046
11. Venables, J. A.; Spiller, G. D. T.; Hanbücken, M. Rep. Prog. Phys. 1984, 47, 399-459
12. Evans, J. W.; Thiel, P. A.; Bartelt, M. C. Surf. Sci. Rep. 2006, 61, 1-128
13. Voigtländer, B. Surf. Sci. Rep. 2001, 43, 127-254
14. Atomistic Aspects of Epitaxial Growth; Kotrla, M.; Papanicolaou, N. I.; Vvedensky, D. D.; Wille, L. T., Eds.; Kluwer Academic: Dordrecht, 2002.
15. Pimpinelli, A.; Villain, J. Physics of Crystal Growth; Cambridge University Press: Cambridge, U.K., 1998.
16. Tokar, V. I.; Dreyssé, H. Phys. Rev. E 2008, 77, 066705
17. Tokar, V. I.; Dreyssé, H. Phys. Rev. B 2009, 80, 161403(R)
18. Amara, H.; Bichara, C.; Ducastelle, F. Phys. Rev. B 2006, 73, 113404
19. Wang, B.; Ma, X.; Caffio, M.; Schaub, R.; Li, W.-X. Nano Lett. 2011, 11, 424-430
20. Ratsch, C.; Venables, J. J. Vac. Sci. Technol., A 2003, 21, S96-S109
21. Amar, J. G.; Popescu, M. N.; Family, F. Phys. Rev. Lett. 2001, 86, 3092-3095
22. Bales, G. S.; Chrzan, D. C. Phys. Rev. B 1994, 50, 6057-6067
23. Ratsch, C.; Gyure, M. F.; Chen, S.; Kang, M.; Vvedensky, D. D. Phys. Rev. B 2000, 61, R10598-R10601
24. Monserrat, B.; Lloyd-Williams, J. Private communication.