High active carrier concentration in n-type, thin film Ge using delta-doping

Optical Materials Express

Volumn 2, Issue 11, 2012, Pages 1462-1469

  Camacho Aguilera, Rodolfo E ^a   Cai, Yan ^a   Bessette, Jonathan T ^a   Kimerling, Lionel C ^a   Michel, Jurgen ^a  

^a Massachusetts Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DELTA-DOPING; DOPANT CONCENTRATIONS; DOPANT DIFFUSION; IN-SITU DOPING; MULTIPLE MONOLAYERS; OUT-DIFFUSION; PHOSPHOROUS CONCENTRATIONS; PHOSPHORUS DIFFUSION;

GERMANIUM; MONOLAYERS; PHOSPHORUS;

DIFFUSION;

EID: 84870332150     PISSN: None     EISSN: 21593930     Source Type: Journal    
DOI: 10.1364/OME.2.001462     Document Type: Article

References (26)

1. L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, "Electronic-photonic integrated circuits on the CMOS platform," Proc. SPIE 6125, 612502 (2006).
2. R. Soref, "Silicon photonics: a review of recent literature," Silicon 2(1), 1-6 (2010).
3. J. Michel, J. Liu, and L. C. Kimerling, "High-performance Ge-on-Si photodetectors," Nat. Photonics 4(8), 527-534 (2010).
4. X. Sun, J. Liu, L. C. Kimerling, and J. Michel, "Room-temperature direct bandgap electroluminesence from Geon-Si light-emitting diodes," Opt. Lett. 34(8), 1198-1200 (2009).
5. E. Kasper, M. Oehme, T. Aguirov, J. Werner, M. Kittler, and J. Schulze, "Room temperature direct band gap emission from Ge p-i-n heterojunction photodiodes," in Proceedings of Group IV Photonics 2010 (2010).
6. P. Velha, K. Gallacher, D. C. Dumas, M. Myronov, D. R. Leadley, and D. J. Paul, "Direct band-gap electroluminescence from strained n-doped germanium diode," in CLEO: Science and Innovations, OSA Technical Digest (online) (Optical Society of America, 2012), paper CW1L.7.
7. S.-L. Cheng, J. Lu, G. Shambat, H.-Y. Yu, K. Saraswat, J. Vuckovic, and Y. Nishi, "Room temperature 1.6 μm electroluminescence from Ge light emitting diode on Si substrate," Opt. Express 17(12), 10019-10024 (2009).
8. M. de Kersauson, R. Jakomin, M. El Kurdi, G. Beaudoin, N. Zerounian, F. Aniel, S. Sauvage, I. Sagnes, and P. Boucaud, "Direct and indirect band gap room temperature electroluminescence of Ge diodes," J. Appl. Phys. 108(2), 023105 (2010).
9. J. Liu, X. Sun, R. Camacho-Aguilera, L. C. Kimerling, and J. Michel, "Ge-on-Si laser operating at room temperature," Opt. Lett. 35(5), 679-681 (2010).
10. R. E. Camacho-Aguilera, Y. Cai, N. Patel, J. T. Bessette, M. Romagnoli, L. C. Kimerling, and J. Michel, "An electrically pumped germanium laser," Opt. Express 20(10), 11316-11320 (2012).
11. X. Sun, J. Liu, L. C. Kimerling, J. Michel, and T. L. Koch, "Band-engineered Ge as gain medium for Si-based laser," in Integrated Photonics and Nanophotonics Research and Applications (IPNRA) Topical Meeting, (Boston, MA, USA, 2008).
12. X. Sun, J. Liu, L. C. Kimerling, and J. Michel, "Direct gap photoluminescence of n-type tensile-strained Ge-on-Si," Appl. Phys. Lett. 95(1), 011911 (2009).
13. X. Sun, "Ge-on-Si light-emitting materials and devices for silicon photonics," Ph.D. dissertation (MIT, 2009).
14. S. Brotzmann and H. Bracht, "Intrinsic and extrinsic diffusion of phosphorus, arsenic, and antimony in germanium," J. Appl. Phys. 103(3), 033508 (2008).
15. X. Sun, J. Liu, L. C. Kimerling, and J. Michel, "Optical bleaching of thin film Ge on Si," ECS Trans. 16, 881-889 (2008).
16. A. Satta, E. Simoen, R. Duffy, T. Janssens, T. Clarysse, A. Benedetti, M. Meuris, and W. Vandervorst, "Diffusion, activation, and regrowth behavior of high dose P implants in Ge," Appl. Phys. Lett. 88(16), 162118 (2006).
17. S. J. Bass, "Silicon and germanium doping of epitaxial gallium arsenide grown by the trimethylgallium-arsine method," J. Cryst. Growth 47(5-6), 613-618 (1979).
18. C. E. C. Wood, G. Metze, J. Berry, and L. F. Eastman, "Complex free-carrier profile synthesis by 'atomic-plane' doping of MBE GaAs," J. Appl. Phys. 51(1), 383-387 (1980).
19. H. Gossmann, A. M. Vredenberg, C. S. Rafferty, H. S. Luftman, F. C. Unterwald, D. C. Jacobson, T. Boone, and J. M. Poate, "Diffusion of dopants in B- and Sb-delta-doped Si films grown by solid-phase epitaxy," J. Appl. Phys. 74(5), 3150-3155 (1993).
20. G. Scappucci, G. Capellini, W. C. T. Lee, and M. Y. Simmons, "Ultradense phosphorus in germanium deltadoped layers," Appl. Phys. Lett. 94(16), 162106 (2009).
21. G. Scappucci, G. Capellini, W. M. Klesse, and M. Y. Simmons, "Dual-temperature encapsulation of phosphorus in germanium delta layers toward ultra-shallow junctions," J. Cryst. Growth 316(1), 81-84 (2011).
22. Y. Cai, R. Camacho-Aguilera, J. T. Bessette, L. C. Kimerling, and J. Michel, "High phosphorus doped germanium: dopant diffusion and modeling," J. Appl. Phys. 112(3), 034509 (2012).
23. H.-C. Luan, D. R. Lim, K. K. Lee, K. M. Chen, J. G. Sandland, K. Wada, and L. C. Kimerling, "High-quality Ge epilayers on Si with low threading-dislocation densities," Appl. Phys. Lett. 75(19), 2909-2911 (1999).
24. S.-M. Jang, K. Liao, and R. Reif, "Chemical vapor deposition of epitaxial silicon-germanium from silane and germane. II. In situ boron, arsenic, and phosphorus doping," J. Electrochem. Soc. 142(10), 3520-3527 (1995).
25. R. Camacho-Aguilera, Z. Han, Y. Cai, J. Bessette, L. Kimerling, and J. Michel, "Band gap narrowing in highly doped Ge," submitted (2012).
26. R. Olesinski, N. Kanani, and G. Abbaschian, "The Ge-P (germanium-phosphorus) system," J. Phase Equilibria 6, 262-266 (1985).