Distributed amplifiers based on spindt-type field-emission nanotriodes

IEEE Transactions on Nanotechnology

Volumn 11, Issue 6, 2012, Pages 1201-1211

  Chen, Pai Yen ^a   Huang, Haiyu ^a,b   Akinwande, Deji ^a   Alù, Andrea ^a  

^a The University of Texas at Austin   (United States)

^b HOUSTON METHODIST RESEARCH INSTITUTE   (United States)

Author keywords

Carbon nanotubes; cold cathodes; electron field emission; microwave amplifiers; nanomaterial emitters; vacuum nanoelectronics

Indexed keywords

2D-ARRAYS; ARRAY DENSITIES; COLD CATHODES; DC CHARACTERISTICS; DEVICE MODELS; DISTRIBUTED AMPLIFIER; ELECTRON FIELD EMISSION; FIELD EMITTER; FRONT END; HIGH FREQUENCY HF; HIGH-FREQUENCY APPLICATIONS; MICROWAVE PROPERTY; NANO EMITTERS; NANOMATERIAL; NANOTRIODES; OPEN ENDED WAVEGUIDES; PHYSICS-BASED; POWER GAINS; POWER RADIATIONS; RADIO FREQUENCIES; SATELLITE COMMUNICATIONS; SELF-ALIGNED GATE; TRANSMISSION-LINE; VACUUM NANOELECTRONICS; WIRELESS SYSTEMS;

CARBON NANOTUBES; MICROWAVE AMPLIFIERS; NANOSTRUCTURED MATERIALS; SATELLITE COMMUNICATION SYSTEMS; WAVEGUIDES;

BROADBAND AMPLIFIERS;

EID: 84870258747     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2012.2215336     Document Type: Article

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