Vertically aligned carbon nanofiber-based field emission electron sources with an integrated focusing electrode

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 1, 2004, Pages 35-39

  Guillorn, M A ^a,b   Yang, X ^a,b   Melechko, A V ^a,b   Hensley, D K ^a   Hale, M D ^a   Merkulov, V I ^a   Simpson, M L ^a,b   Baylor, L R ^a   Gardner, W L ^a   Lowndes, D H ^a  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

^b University of Tennessee   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY ELEMENT METHOD; CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; ELECTRIC FIELDS; ELECTRON BEAM LITHOGRAPHY; ELECTROSTATICS; ETCHING; FIELD EMISSION CATHODES; IMAGE ANALYSIS; MICROELECTRONICS; OXIDATION; PHOTORESISTS; SCANNING ELECTRON MICROSCOPY;

DEVICE FABRICATION; ELECTRON GUN STRUCTURES; SOURCE-MEASURE UNITS (SMU); VERTICALLY ALIGNED CARBON NANOFIBER (VACNF);

CARBON;

EID: 12144291632     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1633768     Document Type: Conference Paper

References (24)

1. D. Temple, Mater. Sci. Eng., R. 24, 185 (1999).
2. J. Itoh, Y. Tohma, K. Morikawa, S. Kanemaru, and K. Shimizu, J. Vac. Sci. Technol. B 13, 1968 (1995).
3. Y. Toma, S. Kanemaru, and J. Itoh, J. Vac. Sci. Technol. B 14, 1902 (1996).
4. J. H. Lee, Y. H. Song, S. Y. Kang, S. G. Kim, and K. I. Cho, J. Vac. Sci. Technol. B 16, 811 (1998).
5. A. Hosono, S. Kawabuchi, S. Horibata, S. Okuda, H. Harada, and M. Takai, J. Vac. Sci. Technol. B 17, 575 (1999).
6. D. Nicolaescu, V. Filip, and J. Itoh, J. Vac. Sci. Technol. B 19, 892 (2001).
7. D. Li and K. Zhang, J. Vac. Sci. Technol. B 19, 1820 (2001).
8. L. Dvorson and A. I. Akinwande, J. Vac. Sci. Technol. B 20, 53 (2002).
9. L. Dvorson, I. Kymissis, and A. I. Akinwande, J. Vac. Sic. Technol. B 21, 486 (2003).
10. N. N. Chubun, A. G. Chakhovskoi, M. Hajra, and C. E. Hunt, J. Vac. Sci. Technol. B 21, 483 (2003).
11. X. Xu and G. R. Brandes, Mater. Res. Soc. Symp. Proc. 509, 107 (1998).
12. Q. H. Wang, M. Yan, and R. P. H. Chang, Appl. Phys. Lett. 78, 1294 (2001).
13. Y. H. Lee, Y. T. Jang, D. H. Kim, J. H. Ahn, and B. K. Ju, Adv. Mater. (Weinheim, Ger.) 13, 479 (2001).
14. D. S. Hsu and J. Shaw, Appl. Phys. Lett. 80, 118 (2002).
15. Y. S. Choi et al., Appl. Phys. Lett. 82, 3565 (2003).
16. G. Pirio, P. Legagneux, D. Pribat, K. B. K. Teo, M. Chhowalla, G. A. J. Amaratunga, and W. I. Milne, Nanotechnology 13, 1 (2001).
17. M. A. Guillorn, A. V. Melechko, V. I. Merkulov, E. D. Ellis, C. L. Britton, M. L. Simpson, D. H. Lowndes, and L. R. Baylor, Appl. Phys. Lett. 79, 3506 (2001).
18. W. A. de Heer, A. Chatelain, and D. Ugaarte, Science 269, 1179 (1995).
19. F. S. Baker, A. R. Osborn, and J. Williams, J. Phys. D 7, 2105 (1974).
20. K. A. Dean and B. R. Chalamala, Appl. Phys. Lett. 75, 3017 (1999).
21. L. R. Baylor, V. I. Merkulov, E. D. Ellis, M. A. Guillorn, D. H. Lowndes, A. V. Melechko, M. L. Simpson, and J. H. Whealton, J. Appl. Phys. 91, 4602 (2002).
22. L. R. Baylor et al., J. Vac. Sci. Technol. B 20, 2646 (2002).
23. V. I. Merkulov, D. H. Lowndes, Y. Y. Wei, G. Eres, and E. Voelkl, Appl. Phys. Lett. 76, 3555 (2000).
24. M. A. Guillorn, A. V. Melechko, V. I. Merkulov, D. K. Hensley, M. L. Simpson, and D. H. Lowndes, Appl. Phys. Lett. 81, 3660 (2002).