Transistor characteristics of thermal chemical vapor deposition carbon nanotubes field emission triode

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 2, 2005, Pages 868-873

  Wong, Y M ^a   Kang, W P ^a   Davidson, J L ^a   Hofmeister, W ^b   Wei, S ^b   Huang, J H ^c  

^a VANDERBILT UNIVERSITY   (United States)

^b VANDERBILT UNIVERSITY   (United States)

^c NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EMITTERS; GATE-CATHODE SPACING;

CARBON NANOTUBES; CHEMICAL VAPOR DEPOSITION; ELECTRIC CURRENTS; ELECTRIC IMPEDANCE; ELECTRIC POTENTIAL; FIELD EMISSION CATHODES; TRANSMISSION ELECTRON MICROSCOPY; TRIODES;

TRANSISTORS;

EID: 22944432640     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1864062     Document Type: Conference Paper

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