Unipolar resistive switching phenomena in fully transparent SiN-based memory cells

Semiconductor Science and Technology

Volumn 27, Issue 12, 2012, Pages

  Kim, Hee Dong ^a   An, Ho Myoung ^a   Hong, Seok Man ^a   Kim, Tae Geun ^a  

^a Korea University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC DEVICE; INSULATING PROPERTIES; MEMORY CELL; METALLIC CONDUCTION; POWER LAW RELATION; RESISTIVE SWITCHING; RESISTIVE SWITCHING MEMORIES; RETENTION TIME; TEMPERATURE DEPENDENT; UNIPOLAR SWITCHING; VISIBLE REGION;

MAGNETIC MATERIALS; SEMICONDUCTOR DEVICES;

SILICON NITRIDE;

EID: 84870256732     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/27/12/125020     Document Type: Article

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