Transparent resistive switching memory using ITO/AlN/ITO capacitors

IEEE Electron Device Letters

Volumn 32, Issue 8, 2011, Pages 1125-1127

  Kim, Hee Dong ^a   An, Ho Myoung ^a   Seo, Yujeong ^a   Kim, Tae Geun ^a  

^a Korea University   (South Korea)

Author keywords

AlN; nonvolatile memory (NVM); transparent resistive random access memory (ReRAM) (T ReRAM)

Indexed keywords

ALN; ELECTRONIC DEVICE; HIGH-TO-LOW; NONVOLATILE MEMORY (NVM); RELIABILITY TEST; RESISTANCE RATIO; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; RESISTIVE SWITCHING MEMORIES; RETENTION TIME; SWITCHING BEHAVIORS; TRANSPARENT RESISTIVE RANDOM ACCESS MEMORY (RERAM) (T-RERAM); VISIBLE REGION;

CAPACITORS; NONVOLATILE STORAGE; SWITCHING SYSTEMS;

RANDOM ACCESS STORAGE;

EID: 79960929742     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2158056     Document Type: Article

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