Bipolar resistive switching effect in Gd2O3 films for transparent memory application

Microelectronic Engineering

Volumn 88, Issue 7, 2011, Pages 1586-1589

  Liu, Kou Chen ^a   Tzeng, Wen Hsien ^b   Chang, Kow Ming ^b,c   Chan, Yi Chun ^a   Kuo, Chun Chih ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c I SHOU UNIVERSITY   (Taiwan)

Author keywords

Gadolinium oxide; Gd2O 3; Resistive memory; RRAM; Transparent memory; TRRAM

Indexed keywords

GADOLINIUM OXIDE; RESISTIVE MEMORY; RRAM; TRANSPARENT MEMORY; TRRAM;

GADOLINIUM; ITO GLASS; OXYGEN; SUBSTRATES; SWITCHING SYSTEMS;

RANDOM ACCESS STORAGE;

EID: 79958056947     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2010.11.021     Document Type: Article

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